Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices
Abstract
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials
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Affiliations
State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, 322000 Zhejiang, China
School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China
School of Information Science and Technology, and Academy for Engineering and Technology, Fudan University, Shanghai 200433, China
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
University of Michigan─Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China
State Key Laboratory of Laser Interaction with Matter, Innovation Laboratory of Electro-Optical Countermeasures Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, Jilin 130033, China
Academy for Engineering and Technology, Fudan University, Shanghai 200433, China
Funding
Natural Science Foundation of Shanghai · National Natural Science Foundation of China · Fudan University-CIOMP Joint Fund · Shanghai Municipal Natural Science Foundation · "First-Class Construction" project of Fudan University · National Key R&D Program of China · Shanghai Municipal Science and Technology Commission · State Key Laboratory of ASIC & System, Fudan University · National Young 1000 Talent Plan of China · Shanghai Sailing Program