Van der Waals heterostructures for spintronics and opto-spintronics
Source abstract
Abstract
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Quantum and electron transport phenomena · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
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1. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419–425 (2013).10.1038/nature12385 ↗
2. Novoselov, K. S., Mishchenko, A., Carvalho, A. & Neto, A. H. C. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).10.1126/science.aac9439 ↗
3. Han, W., Kawakami, R. K., Gmitra, M. & Fabian, J. Graphene spintronics. Nat. Nanotechnol. 9, 794–807 (2014).10.1038/nnano.2014.214 ↗
4. Roche, S. et al. Graphene spintronics: the European Flagship perspective. 2D Mater. 2, 030202 (2015).10.1088/2053-1583/2/3/030202 ↗
5. Avsar, A. et al. Colloquium: spintronics in graphene and other two-dimensional materials. Rev. Mod. Phys. 92, 021003 (2020).10.1103/RevModPhys.92.021003 ↗
6. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).10.1038/natrevmats.2017.33 ↗
7. Gibertini, M., Koperski, M., Morpurgo, A. F. & Novoselov, K. S. Magnetic 2D materials and heterostructures. Nat. Nanotechnol. 14, 408–419 (2019).10.1038/s41565-019-0438-6 ↗
8. Zutic, I., Matos-Abiague, A., Scharf, B., Dery, H. & Belaschhenko, K. Proximitized materials. Mater. Today 22, 85–107 (2019).10.1016/j.mattod.2018.05.003 ↗
9. Manchon, A. et al. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems. Rev. Mod. Phys. 91, 035004 (2019).10.1103/RevModPhys.91.035004 ↗
10. Dieny, B. et al. Opportunities and challenges for spintronics in the microelectronics industry. Nat. Electron. 3, 446–459 (2020).10.1038/s41928-020-0461-5 ↗
11. Loong, L. M. et al. Flexible MgO barrier magnetic tunnel junctions. Adv. Mater. 28, 4983–4990 (2016).10.1002/adma.201600062 ↗
12. Serrano, I. G. et al. Two-dimensional flexible high diffusive spin circuits. Nano Lett. 19, 666–673 (2019).10.1021/acs.nanolett.8b03520 ↗
13. Žutić, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).10.1103/RevModPhys.76.323 ↗
14. Schmidt, G., Ferrand, D., Molenkamp, L. W., Filip, A. T. & van Wees, B. J. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Phys. Rev. B 62, R4790–R4793 (2000).10.1103/PhysRevB.62.R4790 ↗
15. Tombros, N., Jozsa, C., Popinciuc, M., Jonkman, H. T. & van Wees, B. J. Electronic spin transport and spin precession in single graphene layers at room temperature. Nature 448, 571–574 (2007).10.1038/nature06037 ↗
16. Han, W. et al. Tunneling spin injection into single layer graphene. Phys. Rev. Lett. 105, 167202 (2010).10.1103/PhysRevLett.105.167202 ↗
17. Neumann, I., Costache, M. V., Bridoux, G., Sierra, J. F. & Valenzuela, S. O. Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers. Appl. Phys. Lett. 103, 112401 (2013).10.1063/1.4820586 ↗
18. Singh, S. et al. Strontium oxide tunnel barriers for high quality spin transport and large spin accumulation in graphene. Nano Lett. 17, 7578–7585 (2017).10.1021/acs.nanolett.7b03543 ↗
19. Friedman, A. L., van ‘t Erve, O. M. J., Li, C. H., Robinson, J. T. & Jonker, B. T. Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport. Nat. Commun. 5, 3161 (2014).10.1038/ncomms4161 ↗
20. Kamalakar, M. V., Dankert, A., Bergsten, J., Ive, T. & Dash, S. P. Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride. Sci. Rep. 4, 6146 (2014).10.1038/srep06146 ↗
21. Gurram, M., Omar, S. & van Wees, B. J. Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures. Nat. Commun. 8, 248 (2017).10.1038/s41467-017-00317-w ↗
22. Avsar, A. et al. Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes. Nat. Phys. 13, 888–893 (2017).10.1038/nphys4141 ↗
23. Xu, J. et al. Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts. Nat. Commun. 9, 2869 (2018).10.1038/s41467-018-05358-3 ↗
24. Yang, L. et al. Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2. Nat. Phys. 11, 830–834 (2015).10.1038/nphys3419 ↗
25. Dey, P. et al. Gate-controlled spin-valley locking of resident carriers in WS2 monolayers. Phys. Rev. Lett. 119, 137401 (2017).10.1103/PhysRevLett.119.137401 ↗
26. Kim, J. et al. Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures. Sci. Adv. 3, e1700518 (2017).10.1126/sciadv.1700518 ↗
27. Gmitra, M. & Fabian, J. Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics. Phys. Rev. B 92, 155403 (2015).10.1103/PhysRevB.92.155403 ↗
28. Luo, Y. K. et al. Opto-valleytronic spin injection in monolayer MoS2/few-layer graphene hybrid spin valves. Nano Lett. 17, 3877–3883 (2017).10.1021/acs.nanolett.7b01393 ↗
29. Avsar, A. et al. Optospintronics in graphene via proximity coupling. ACS Nano 11, 11678–11686 (2017).10.1021/acsnano.7b06800 ↗
30. Drögeler, M. et al. Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices. Nano Lett. 16, 3533–3539 (2016).10.1021/acs.nanolett.6b00497 ↗
31. Gebeyehu, Z. M. et al. Spin communication over 30-µm long channels of chemical vapor deposited graphene on SiO2. 2D Mater. 6, 034003 (2019).10.1088/2053-1583/ab1874 ↗
32. McCormick, E. J. et al. Imaging spin dynamics in monolayer WS2 by time-resolved Kerr rotation microscopy. 2D Mater. 5, 011010 (2017).10.1088/2053-1583/aa98ae ↗
33. Song, X., Xie, S., Kang, K., Park, J. & Sih, V. Long-lived hole spin/valley polarization probed by Kerr rotation in monolayer WSe2. Nano Lett. 16, 5010–5014 (2016).10.1021/acs.nanolett.6b01727 ↗
34. Ersfeld, M. et al. Spin states protected from intrinsic electron–phonon coupling reaching 100 ns lifetime at room temperature in MoSe2. Nano Lett. 19, 4083–4090 (2019).10.1021/acs.nanolett.9b01485 ↗
35. Jin, C. et al. Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures. Science 360, 893–896 (2018).10.1126/science.aao3503 ↗
36. Gmitra, M., Konschuh, S., Ertler, C., Ambrosch-Draxl, C. & Fabian, J. Band-structure topologies of graphene: spin-orbit coupling effects from first principles. Phys. Rev. B 80, 235431 (2009).10.1103/PhysRevB.80.235431 ↗
37. Sichau, J. et al. Resonance microwave measurements of an intrinsic spin-orbit coupling gap in graphene: a possible indication of a topological state. Phys. Rev. Lett. 122, 046403 (2019).10.1103/PhysRevLett.122.046403 ↗
38. Kochan, D., Gmitra, M. & Fabian, J. Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities. Phys. Rev. Lett. 112, 116602 (2014).10.1103/PhysRevLett.112.116602 ↗
39. Kochan, D., Irmer, S., Gmitra, M. & Fabian, J. Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene. Phys. Rev. Lett. 115, 196601 (2015).10.1103/PhysRevLett.115.196601 ↗
40. Van Tuan, D., Ortmann, F., Soriano, D., Valenzuela, S. O. & Roche, S. Pseudospin-driven spin relaxation mechanism in graphene. Nat. Phys. 10, 857–863 (2014).10.1038/nphys3083 ↗
41. Cummings, A. W. & Roche, S. Effects of dephasing on spin lifetime in ballistic spin-orbit materials. Phys. Rev. Lett. 116, 086602 (2016).10.1103/PhysRevLett.116.086602 ↗
42. Ochoa, H., Castro Neto, A. H. & Guinea, F. Elliot-Yafet mechanism in graphene. Phys. Rev. Lett. 108, 206808 (2012).10.1103/PhysRevLett.108.206808 ↗
43. Zhang, P. & Wu, M. W. Electron spin relaxation in graphene with random Rashba field: comparison of the D’yakonov–Perel’ and Elliott–Yafet-like mechanisms. N. J. Phys. 14, 033015 (2012).10.1088/1367-2630/14/3/033015 ↗
44. Fabian, J., Matos-Abiague, A., Ertler, C. & Zutic, I. Semiconductor spintronics. Acta Phys. Slov. 57, 565–907 (2007).
45. Vila, M. et al. Nonlocal spin dynamics in the crossover from diffusive to ballistic transport. Phys. Rev. Lett. 124, 196602 (2020).10.1103/PhysRevLett.124.196602 ↗
46. Guimarães, M. H. D. et al. Controlling spin relaxation in hexagonal bn-encapsulated graphene with a transverse electric field. Phys. Rev. Lett. 113, 086602 (2014).10.1103/PhysRevLett.113.086602 ↗
47. Raes, B. et al. Determination of the spin-lifetime anisotropy in graphene using oblique spin precession. Nat. Commun. 7, 11444 (2016).10.1038/ncomms11444 ↗
48. Benítez, L. A. et al. Investigating the spin-orbit interaction in van der Waals heterostructures by means of the spin relaxation anisotropy. APL Mater. 7, 120701 (2019).10.1063/1.5124894 ↗
49. Raes, B. et al. Spin precession in anisotropic media. Phys. Rev. B 95, 085403 (2017).10.1103/PhysRevB.95.085403 ↗
50. Ringer, S. et al. Measuring anisotropic spin relaxation in graphene. Phys. Rev. B 97, 205439 (2018).10.1103/PhysRevB.97.205439 ↗
51. Cummings, A. W., Garcia, J. H., Fabian, J. & Roche, S. Giant spin lifetime anisotropy in graphene induced by proximity effects. Phys. Rev. Lett. 119, 206601 (2017).10.1103/PhysRevLett.119.206601 ↗
52. Behin-Aein, B., Datta, D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nat. Nanotechnol. 5, 266–270 (2010).10.1038/nnano.2010.31 ↗
53. Wen, H. et al. Experimental demonstration of XOR operation in graphene magnetologic gates at room temperature. Phys. Rev. Appl. 5, 044003 (2016).10.1103/PhysRevApplied.5.044003 ↗
54. Lin, X. et al. Gate-driven pure spin current in graphene. Phys. Rev. Appl. 8, 034006 (2017).10.1103/PhysRevApplied.8.034006 ↗
55. Ingla-Aynés, j., Meijerink, R. J. & van Wees, B. J. Eighty-eight percent directional guiding of spin currents with 90 μm relaxation length in bilayer graphene using carrier drift. Nano Lett. 16, 4825–4830 (2016).10.1021/acs.nanolett.6b01004 ↗
56. Sierra, J. F. et al. Thermoelectric spin voltage in graphene. Nat. Nanotechnol. 13, 107–111 (2018).10.1038/s41565-017-0015-9 ↗
57. Sierra, J. F., Neumann, I., Costache, M. V. & Valenzuela, S. O. Hot-carrier Seebeck effect: diffusion and remote detection of hot carriers in graphene. Nano Lett. 15, 4000–4005 (2015).10.1021/acs.nanolett.5b00922 ↗
58. Abdelouahed, S., Ernst, A., Henk, J., Maznichenko, I. V. & Mertig, I. Spin-split electronic states in graphene: effects due to lattice deformation, Rashba effect, and adatoms by first principles. Phys. Rev. B 82, 125424 (2010).10.1103/PhysRevB.82.125424 ↗
59. Konschuh, S., Gmitra, M., Kochan, D. & Fabian, J. Theory of spin-orbit coupling in bilayer graphene. Phys. Rev. B 85, 115423 (2012).10.1103/PhysRevB.85.115423 ↗
60. Banszerus, L. et al. Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport. Phys. Rev. Lett. 124, 177701 (2020).10.1103/PhysRevLett.124.177701 ↗
61. Zollner, K., Gmitra, M. & Fabian, J. Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles. Phys. Rev. B 99, 125151 (2019).10.1103/PhysRevB.99.125151 ↗
62. Gmitra, M., Kochan, D., Högl, P. & Fabian, J. Trivial and inverted Dirac bands and the emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides. Phys. Rev. B 93, 155104 (2016).10.1103/PhysRevB.93.155104 ↗
63. Kochan, D., Irmer, S. & Fabian, J. Model spin-orbit coupling Hamiltonians for graphene systems. Phys. Rev. B 95, 165415 (2017).10.1103/PhysRevB.95.165415 ↗
64. Rossi, E. & Triola, C. Van Der Waals heterostructures with spin-orbit coupling. Ann. Phys. 532, 1900344 (2020).10.1002/andp.201900344 ↗
65. Li, Y. & Koshino, M. Twist-angle dependence of the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides. Phys. Rev. B 99, 075438 (2019).10.1103/PhysRevB.99.075438 ↗
66. David, A. Induced spin-orbit coupling in twisted graphene–transition metal dichalcogenide heterobilayers: twistronics meets spintronics. Phys. Rev. B 100, 085412 (2019).10.1103/PhysRevB.100.085412 ↗
67. Alsharari, A. M., Asmar, M. M. & Ulloa, S. E. Topological phases and twisting of graphene on a dichalcogenide monolayer. Phys. Rev. B 98, 195129 (2018).10.1103/PhysRevB.98.195129 ↗
68. Wang, T., Bultinck, N. & Zaletel, M. P. Flat-band topology of magic angle graphene on a transition metal dichalcogenide. Phys. Rev. B 102, 235146 (2020).10.1103/PhysRevB.102.235146 ↗
69. Zollner, K. & Fabian, J. Heterostructures of graphene and topological insulators Bi2Se3, Bi2Te3, and Sb2Te3. Phys. Stat. Solidi B 258, 2000081 (2021).10.1002/pssb.202000081 ↗
70. Song, K. et al. Spin proximity effects in graphene/topological insulator heterostructures. Nano Lett. 18, 2033–2039 (2018).10.1021/acs.nanolett.7b05482 ↗
71. Zollner, K. & Fabian, J. Single and bilayer graphene on the topological insulator Bi2Se3: electronic and spin-orbit properties from first principles. Phys. Rev. B 100, 165141 (2019).10.1103/PhysRevB.100.165141 ↗
72. Wang, Z. et al. Strong interface-induced spin–orbit interaction in graphene on WS2. Nat. Commun. 6, 8339 (2015).10.1038/ncomms9339 ↗
73. Wang, Z. et al. Origin and magnitude of ‘designer’ spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides. Phys. Rev. X 6, 041020 (2016).
74. Yang, B. et al. Tunable spin–orbit coupling and symmetry-protected edge states in graphene/WS2. 2D Mater. 3, 031012 (2016).10.1088/2053-1583/3/3/031012 ↗
75. Völkl, T. et al. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene. Phys. Rev. B 96, 125405 (2017).10.1103/PhysRevB.96.125405 ↗
76. Zihlmann, S. et al. Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/graphene/h-BN heterostructures. Phys. Rev. B 97, 075434 (2018).10.1103/PhysRevB.97.075434 ↗
77. Högl, P. et al. Quantum anomalous Hall effects in graphene from proximity-induced uniform and staggered spin-orbit and exchange coupling. Phys. Rev. Lett. 124, 136403 (2020).10.1103/PhysRevLett.124.136403 ↗
78. Frank, T., Högl, P., Gmitra, M., Kochan, D. & Fabian, J. Protected pseudohelical edge states in Z2-trivial proximitized graphene. Phys. Rev. Lett. 120, 156402 (2018).10.1103/PhysRevLett.120.156402 ↗
79. Kane, C. L. & Mele, E. J. Quantum spin Hall effect in graphene. Phys. Rev. Lett. 95, 226801 (2005).10.1103/PhysRevLett.95.226801 ↗
80. Island, J. O. et al. Spin–orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect. Nature 571, 85–89 (2019).10.1038/s41586-019-1304-2 ↗
81. Alsharari, A. M., Asmar, M. M. & Ulloa, S. E. Proximity-induced topological phases in bilayer graphene. Phys. Rev. B 97, 241104 (2018).10.1103/PhysRevB.97.241104 ↗
82. Tiwari, P., Srivastav, S. K., Ray, S., Das, T. & Bid, A. Observation of time-reversal invariant helical edge-modes in bilayer graphene/WSe2 heterostructure. ACS Nano 15, 916–922 (2021).10.1021/acsnano.0c07524 ↗
83. Wang, H. et al. Above room-temperature ferromagnetism in wafer-scale two-dimensional van der Waals Fe3GeTe2 tailored by a topological insulator. ACS Nano 14, 10045–10053 (2020).10.1021/acsnano.0c03152 ↗
84. Matsuoka, H. et al. Spin–orbit-induced Ising ferromagnetism at a van der Waals Interface. Nano Lett. 21, 1807–1814 (2021).10.1021/acs.nanolett.0c04851 ↗
85. Fert, A., Reyren, N. & Cros, V. Magnetic skyrmions: advances in physics and potential applications. Nat. Rev. Mater. 2, 1–15 (2017).10.1038/natrevmats.2017.31 ↗
86. Wu, Y. et al. Néel-type skyrmion in WTe2 /Fe3GeTe2 van der Waals heterostructure. Nat. Commun. 11, 3860 (2020).10.1038/s41467-020-17566-x ↗
87. Yan, W. et al. A two-dimensional spin field-effect switch. Nat. Commun. 7, 13372 (2016).10.1038/ncomms13372 ↗
88. Dankert, A. & Dash, S. P. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nat. Commun. 8, 16093 (2017).10.1038/ncomms16093 ↗
89. Ghiasi, T. S., Ingla-Aynés, J., Kaverzin, A. A. & van Wees, B. J. Large proximity-induced spin lifetime anisotropy in transition-metal dichalcogenide/graphene heterostructures. Nano Lett. 17, 7528–7532 (2017).10.1021/acs.nanolett.7b03460 ↗
90. Benítez, L. A. et al. Strongly anisotropic spin relaxation in graphene–transition metal dichalcogenide heterostructures at room temperature. Nat. Phys. 14, 303–308 (2018).10.1038/s41567-017-0019-2 ↗
91. Offidani, M. & Ferreira, A. Microscopic theory of spin relaxation anisotropy in graphene with proximity-induced spin–orbit coupling. Phys. Rev. B 98, 245408 (2018).10.1103/PhysRevB.98.245408 ↗
92. Garcia, J. H., Vila, M., Cummings, A. W. & Roche, S. Spin transport in graphene/transition metal dichalcogenide heterostructures. Chem. Soc. Rev. 47, 3359–3379 (2018).10.1039/C7CS00864C ↗
93. Xu, J., Zhu, T., Luo, Y. K., Lu, Y.-M. & Kawakami, R. K. Strong and tunable spin-lifetime anisotropy in dual-gated bilayer graphene. Phys. Rev. Lett. 121, 127703 (2018).10.1103/PhysRevLett.121.127703 ↗
94. Leutenantsmeyer, J. C., Ingla-Aynés, J., Fabian, J. & van Wees, B. J. Observation of spin-valley-coupling-induced large spin-lifetime anisotropy in bilayer graphene. Phys. Rev. Lett. 121, 127702 (2018).10.1103/PhysRevLett.121.127702 ↗
95. Sinova, J., Valenzuela, S. O., Wunderlich, J., Back, C. H. & Jungwirth, T. Spin Hall effects. Rev. Mod. Phys. 87, 1213–1260 (2015).10.1103/RevModPhys.87.1213 ↗
96. Manipatruni, S. et al. Scalable energy-efficient magnetoelectric spin–orbit logic. Nature 565, 35–42 (2019).10.1038/s41586-018-0770-2 ↗
97. MacNeill, D. et al. Control of spin–orbit torques through crystal symmetry in WTe2/ferromagnet bilayers. Nat. Phys. 13, 300–305 (2017).10.1038/nphys3933 ↗
98. Shi, S. et al. All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures. Nat. Nanotechnol. 14, 945–949 (2019).10.1038/s41565-019-0525-8 ↗
99. Liang, S. et al. Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures. Adv. Mater. 32, 2002799 (2020).10.1002/adma.202002799 ↗
100. Dushenko, S. et al. Gate-tunable spin-charge conversion and the role of spin-orbit interaction in graphene. Phys. Rev. Lett. 116, 166102 (2016).10.1103/PhysRevLett.116.166102 ↗