Correction: Corrigendum: Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Source abstract
Abstract
Nature Materials 11, 301–305 (2012); published online 26 February 2012; corrected after print 16 February 2015. In the version of this Letter originally published, Khashayar Ghaffarzadeh, with affiliation at the London Centre for Nanotechnology, University College London, London WC1H 0AH, UK, had been omitted from the list of authors.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials · CCD and CMOS Imaging Sensors
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References (1)
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1. 10.1038/nmat325610.1038/nmat3256 ↗