Ultrathin channels make transistors go faster

Thomas D. Anthopoulos

doi:10.1038/s41563-019-0489-y

journal article·2019-10

Ultrathin channels make transistors go faster

Thomas D. Anthopoulos

Nature Materials· Volume 18· Issue 10

Publisher page

Source abstract

Abstract

Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.

The source flagged this abstract for review. Check formulas and completeness against the original publication.

Source: openaire · Quality: needs review · Source record ↗
Source flags: short_text

Research context

Nanomaterials Electronic materials

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (8)

Show source-provided references

1. Gupta, S., Navaraj, W. T., Lorenzelli, L. & Dahiya, R. npj Flex. Electron. 2, 8 (2018).10.1038/s41528-018-0021-5 ↗

2. Franklin, A. D. Science 349, aab2750 (2015).10.1126/science.aab2750 ↗

3. Wu, W. Nanoscale 9, 7342–7372 (2017).10.1039/C7NR01604B ↗

4. Khan, S., Lorenzelli, L. & Dahiya, R. S. IEEE Sens. J. 15, 3164–3185 (2015).10.1109/JSEN.2014.2375203 ↗

5. Petti, L. et al. Appl. Phys. Rev. 3, 021303 (2016).10.1063/1.4953034 ↗

6. Li, S. et al. Nat. Mater. https://doi.org/10.1038/s41563-019-0455-8 (2019).10.1038/s41563-019-0455-8 ↗

7. Faber, H. et al. Sci. Adv. 3, e1602640 (2017).10.1126/sciadv.1602640 ↗

8. Shih, C. W., Chin, A., Lu, C. F. & Su, W. F. Sci. Rep. 6, 19023 (2016).10.1038/srep19023 ↗