journal article·2005-09-01

A sound barrier for silicon?

David A. Muller

Nature Materials· Volume 4· Issue 9
Publisher page

Abstract

For the first time in thirty five years, the clockspeed of the fastest commercial computer chips has not increased. Is the semiconductor industry just pausing for breath or about to suffer a fate similar to that of aerospace?
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Source: europepmc · Quality: needs review · Source record ↗
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Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis

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References (20)

Show source-provided references
1. Moore, G. Cramming more components onto integrated circuits. Electronics 38, 144–117 (1965).
2. Moore, G. in IEEE International Solid-State Circuits Conference Vol. 1, 20–23 (IEEE, San Francisco, 2003).
3. http://www.intel.com/technology/silicon/mooreslaw/
4. Dennard, R. et al. design of ion-implanted MOSFET's with very small physical dimensions. IEEE J. Solid-State Circuits 9, 256–268 (1974).10.1109/JSSC.1974.1050511 ↗
5. Sze, S. M. Semiconductor Devices: Physics and Technology (Wiley, New York, 1985).
6. Muller, D. A. et al. The electronic structure at the atomic scale of ultra-thin gate oxides. Nature 399, 758–761 (1999).10.1038/21602 ↗
7. Mahajan, R. et al. Emerging directions for packaging technologies. Intel Technol. J. 6, 62–75 (2002).
8. Nowak, E. J. Maintaining the benefits of CMOS scaling when scaling bogs down. IBM J. Res. Dev. 46, 169–180 (2002).10.1147/rd.462.0169 ↗
9. Doyle, B. et al. Transistor elements for 30nm physical gate lengths and beyond. Intel Technol. J. 6, 42–54 (2002).
10. Wallace, R. M. & Wilk, G. D. Alternative gate dielectrics for microelectronics. Mater. Res. Soc. Bull. 27, 186–191 (2002).10.1557/mrs2002.70 ↗
11. Semiconductor Industry Association International Technology Roadmap for Semiconductors, Update (2000); see http://public.itrs.net/Files/2000UpdateFinal/2kUdFinal.htm.
12. Chau, R. et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Trans. Nanotechnol. 4, 153–158 (2005).10.1109/TNANO.2004.842073 ↗
13. Hiremane, R. From Moore's law to Intel innovation—prediction to reality. Intel Mag. 1–9 (April 2005).
14. Markoff, J. in New York Times C3 (New York, 7 February 2005).
15. Horiguchi, S., Kobayashi, T., Miyake, M., Oda, M. & Kiuchi, K. Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide. IEDM Tech. Dig. 761–773 (1985).10.1109/IEDM.1985.191088 ↗
16. Momose, H. S. et al. 1.5 nm direct-tunneling gate oxide Si MOSFETs. IEEE Trans. Elec. Dev. 43, 1233–1242 (1996).10.1109/16.506774 ↗
17. Chau, R. et al. High-k/metal gate stack and its MOSFETs characteristics. IEEE Elect. Dev. Lett. 25, 408–410 (2004).10.1109/LED.2004.828570 ↗
18. Thompson, S. et al. 130nm logic technology featuring 60nm transistors, low-k dielectrics, and Cu interconnects. Intel Technol. J. 6, 5–13 (2002).
19. The History of United Airlines http://www.united.com/page/middlepage/0,6823,2286,00.html.
20. National Museum of the United States Airforce; www.wpafb.af.mil.museum.htm.