Black phosphorus nanoribbons for high-performance transistors and photodetectors
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OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications
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References (5)
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1. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014). This paper reports the high performance of FETs based on 2D BP, demonstrating that BP is a favourable channel material for FETs.10.1038/nnano.2014.35 ↗
2. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014). This paper reports the dependence of the bandgap of 2D BP on the number of BP layers.10.1021/nn501226z ↗
3. Sorkin, V. et al. Recent advances in the study of phosphorene and its nanostructures. Crit. Rev. Solid State Mater. Sci. 42, 1–82 (2016). A review article that discusses the dependence of the bandgap of BPNRs on their geometry and edge status.10.1080/10408436.2016.1182469 ↗
4. Feng, X. et al. High mobility anisotropic black phosphorus nanoribbon field-effect transistor. Adv. Funct. Mater. 28, 1801524 (2018). This paper reports the fabrication of BPNRs using electron-beam lithography of 2D BP followed by plasma etching.10.1002/adfm.201801524 ↗
5. Watts, M. C. et al. Production of phosphorene nanoribbons. Nature 568, 216–220 (2019). This paper reports the preparation of stable BPNR dispersions through lithium intercalation-induced ionic scissoring of BP crystals.10.1038/s41586-019-1074-x ↗