Wafer-scale monolayer dielectric integration on atomically thin semiconductors
Source abstract
Abstract
A promising strategy for further miniaturizing metal-oxide-semiconductor field-effect transistors is the use of ultrathin two-dimensional channel materials. However, achieving robust dielectric integration with a sub-1-nm capacitance equivalent thickness (CET) remains challenging. Here we present a wafer-scale monolayer MoO3, transformed from MoS2, which can be seamlessly integrated with atomically thin semiconductors. Its atomically flat surface and the strong electronegativity of Mo6+ further enable the uniform deposition of high-κ dielectrics. Utilizing the 0.96-nm-CET MoO3/HfO2 as the dielectric, the top-gated p-type (n-type) two-dimensional transistors show a high ON/OFF ratio of 6.5 × 106 (3.2 × 108) and a steep subthreshold swing of 60.8 (63.1) mV dec-1. Statistical analysis of a 1,024-device array achieves a high yield of 92.2%. Furthermore, when monolayer MoO3 is used as the top-gated dielectric with an ultimately scaled CET of 0.64 nm, the gate leakage current meets the low-power limit standard (1.5 × 10-2A cm-2) over the entire bias range. Our study provides a scalable approach for the integration of ultralow-CET dielectrics on two-dimensional materials, marking a critical step towards their future industrial deployment.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · 2D Materials and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
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