Non-invasive bioinert room-temperature quantum sensor from silicon carbide qubits
Source abstract
Abstract
Abstract Room-temperature shallow defect spin qubits acting as a quantum sensor with favourable properties towards the biological environment are sought after, with promising impacts on bioimaging, radical detection and nanoscale nuclear spin sensing. Here we show that alkene-terminated silicon carbide hosting divacancy qubits located a few nanometres below the surface leads to a stable operation with superior sensitivity in which the host is a bioinert semiconductor with existing wafer-scale chip technology. The read-out of the qubit occurs at near-infrared wavelengths, which exhibit a minimum absorption by the organic molecules or water. We show that the divacancy qubit can realize multiple quantum sensor schemes under ambient conditions in which the suggested surface termination can be readily tailored towards the desired application. The combination of the paramount host, surface functionalization and qubit properties may significantly advance room-temperature quantum sensing, as well as provide a platform for quantum simulation and optoelectronic devices.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Mechanical and Optical Resonators · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (64)
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1. Cambria, M. et al. Temperature-dependent spin-lattice relaxation of the nitrogen-vacancy spin triplet in diamond. Phys. Rev. Lett. 130, 256903 (2023).10.1103/PhysRevLett.130.256903 ↗
2. Gruber, A. et al. Scanning confocal optical microscopy and magnetic resonance on single defect centers. Science 276, 2012–2014 (1997).10.1126/science.276.5321.2012 ↗
3. Doherty, M. W. et al. The nitrogen-vacancy colour centre in diamond. Phys. Rep. 528, 1–45 (2013).10.1016/j.physrep.2013.02.001 ↗
4. Gali, A. Ab initio theory of the nitrogen-vacancy center in diamond. Nanophotonics 8, 1907–1943 (2019).10.1515/nanoph-2019-0154 ↗
5. Gali, A. Time-dependent density functional study on the excitation spectrum of point defects in semiconductors. Phys. Status Solidi B 248, 1337–1346 (2011).10.1002/pssb.201046254 ↗
6. Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. & Awschalom, D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84–87 (2011).10.1038/nature10562 ↗
7. Li, Q. et al. Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast. Natl Sci. Rev. 9, nwab122 (2022).10.1093/nsr/nwab122 ↗
8. Rembold, P. et al. Introduction to quantum optimal control for quantum sensing with nitrogen-vacancy centers in diamond. AVS Quantum Sci. 2, 024701 (2020).10.1116/5.0006785 ↗
9. Smith, A. M., Mancini, M. C. & Nie, S. Second window for in vivo imaging. Nat. Nanotechnol. 4, 710–711 (2009).10.1038/nnano.2009.326 ↗
10. Ivády, V. et al. Stabilization of point-defect spin qubits by quantum wells. Nat. Commun. 10, 5607 (2019).10.1038/s41467-019-13495-6 ↗
11. Simin, D. et al. All-optical d.c. nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide. Phys. Rev. X 6, 031014 (2016).
12. Niethammer, M. et al. Vector magnetometry using silicon vacancies in 4H-SiC under ambient conditions. Phys. Rev. Appl. 6, 034001 (2016).10.1103/PhysRevApplied.6.034001 ↗
13. Abraham, J. B. et al. Nanotesla magnetometry with the silicon vacancy in silicon carbide. Phys. Rev. Appl. 15, 064022 (2021).10.1103/PhysRevApplied.15.064022 ↗
14. Lekavicius, I. et al. Magnetometry based on silicon-vacancy centers in isotopically purified 4H-SiC. Phys. Rev. Appl. 19, 044086 (2023).10.1103/PhysRevApplied.19.044086 ↗
15. Tahara, K. et al. Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature. npj Quantum Inf. 11, 58 (2025).10.1038/s41534-025-01011-2 ↗
16. Lee, E. M., Yu, A., de Pablo, J. J. & Galli, G. Stability and molecular pathways to the formation of spin defects in silicon carbide. Nat. Commun. 12, 6325 (2021).10.1038/s41467-021-26419-0 ↗
17. Bourassa, A. et al. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nat. Mater. 19, 1319–1325 (2020).10.1038/s41563-020-00802-6 ↗
18. Babin, C. et al. Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence. Nat. Mater. 21, 67–73 (2022).10.1038/s41563-021-01148-3 ↗
19. Widmann, M. et al. Coherent control of single spins in silicon carbide at room temperature. Nat. Mater. 14, 164–168 (2015).10.1038/nmat4145 ↗
20. He, Z.-X. et al. Robust single modified divacancy color centers in 4H-SiC under resonant excitation. Nat. Commun. 15, 10146 (2024).10.1038/s41467-024-53662-y ↗
21. Shur, M., Rumyantsev, S. L. & Levinshtein, M. E. SiC Materials and Devices (World Scientific, 2006).10.1142/6134 ↗
22. Chung, G. et al. Improved inversion channel mobility for 4H-SiC mosfets following high temperature anneals in nitric oxide. IEEE Electron Device Lett. 22, 176–178 (2001).10.1109/55.915604 ↗
23. Nanen, Y., Kato, M., Suda, J. & Kimoto, T. Effects of nitridation on 4H-SiC MOSFETs fabricated on various crystal faces. IEEE Trans. Electron Devices 60, 1260–1262 (2013).10.1109/TED.2012.2236333 ↗
24. Fukuda, K., Kato, M., Kojima, K. & Senzaki, J. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face. Appl. Phys. Lett. 84, 2088–2090 (2004).10.1063/1.1682680 ↗
25. Okamoto, M. et al. Coexistence of small threshold voltage instability and high channel mobility in 4H-SiC (0001) metal–oxide–semiconductor field-effect transistors. Appl. Phys. Express 5, 041302 (2012).10.1143/APEX.5.041302 ↗
26. Sato, S.-i et al. Room temperature electrical control of single photon sources at 4H-SiC surface. ACS Photonics 5, 3159–3165 (2018).10.1021/acsphotonics.8b00375 ↗
27. Johnson, B. et al. Optically active defects at the SiC/SiO2 interface. Phys. Rev. Appl. 12, 044024 (2019).10.1103/PhysRevApplied.12.044024 ↗
28. Kosugi, R., Cho, W.-J., Fukuda, K., Arai, K. & Suzuki, S. High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001). J. Appl. Phys. 91, 1314–1317 (2002).10.1063/1.1428099 ↗
29. Kobayashi, T. et al. Design and formation of SiC(0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation. Appl. Phys. Express 13, 091003 (2020).10.35848/1882-0786/ababed ↗
30. Sieber, N., Mantel, B., Seyller, T., Ristein, J. & Ley, L. Hydrogenation of 6H-SiC as a surface passivation stable in air. Diamond Relat. Mater. 10, 1291–1294 (2001).10.1016/S0925-9635(00)00529-X ↗
31. Seyller, T. Passivation of hexagonal SiC surfaces by hydrogen termination. J. Phys.: Condens. Matter 16, S1755 (2004).
32. Rosso, M. et al. Covalent attachment of organic monolayers to silicon carbide surfaces. Langmuir 24, 4007–4012 (2008).10.1021/la704002y ↗
33. Lohrmann, A. et al. Single-photon emitting diode in silicon carbide. Nat. Commun. 6, 7783 (2015).10.1038/ncomms8783 ↗
34. Lohrmann, A. et al. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation. Appl. Phys. Lett. 108, 021107 (2016).10.1063/1.4939906 ↗
35. Li, P., Udvarhelyi, P., Li, S., Huang, B. & Gali, A. Carbon cluster emitters in silicon carbide. Phys. Rev. B 108, 085201 (2023).10.1103/PhysRevB.108.085201 ↗
36. Myers, B. A. et al. Probing surface noise with depth-calibrated spins in diamond. Phys. Rev. Lett. 113, 027602 (2014).10.1103/PhysRevLett.113.027602 ↗
37. Puniredd, S. R., Assad, O., Stelzner, T., Christiansen, S. & Haick, H. Catalyst-free functionalization for versatile modification of nonoxidized silicon structures. Langmuir 27, 4764–4771 (2011).10.1021/la2002546 ↗
38. Li, Y. et al. Hybrids of organic molecules and flat, oxide-free silicon: high-density monolayers, electronic properties, and functionalization. Langmuir 28, 9920–9929 (2012).10.1021/la3010568 ↗
39. Steinert, S. et al. Magnetic spin imaging under ambient conditions with sub-cellular resolution. Nat. Commun. 4, 1607 (2013).10.1038/ncomms2588 ↗
40. Lin, W.-X. et al. Temperature dependence of divacancy spin coherence in implanted silicon carbide. Phys. Rev. B 104, 125305 (2021).10.1103/PhysRevB.104.125305 ↗
41. Pelliccione, M., Myers, B. A., Pascal, L., Das, A. & Jayich, A. B. Two-dimensional nanoscale imaging of gadolinium spins via scanning probe relaxometry with a single spin in diamond. Phys. Rev. Appl. 2, 054014 (2014).10.1103/PhysRevApplied.2.054014 ↗
42. Webb, J. L. et al. Nanotesla sensitivity magnetic field sensing using a compact diamond nitrogen-vacancy magnetometer. Appl. Phys. Lett. 114, 231103 (2019).10.1063/1.5095241 ↗
43. Furuya, T., Kamlet, A. S. & Ritter, T. Catalysis for fluorination and trifluoromethylation. Nature 473, 470–477 (2011).10.1038/nature10108 ↗
44. Buriak, J. M. Organometallic chemistry on silicon and germanium surfaces. Chem. Rev. 102, 1271–1308 (2002).10.1021/cr000064s ↗
45. Pujari, S. P. et al. Covalently attached organic monolayers onto silicon carbide from 1-alkynes: molecular structure and tribological properties. Langmuir 29, 4019–4031 (2013).10.1021/la400040e ↗
46. Smits, J. et al. Two-dimensional nuclear magnetic resonance spectroscopy with a microfluidic diamond quantum sensor. Sci. Adv. 5, eaaw7895 (2019).10.1126/sciadv.aaw7895 ↗
47. Schmitt, S. et al. Submillihertz magnetic spectroscopy performed with a nanoscale quantum sensor. Science 356, 832–837 (2017).10.1126/science.aam5532 ↗
48. Wirtitsch, D. et al. Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin, and charge state initialization. Phys. Rev. Res. 5, 013014 (2023).10.1103/PhysRevResearch.5.013014 ↗
49. Cai, J., Retzker, A., Jelezko, F. & Plenio, M. B. A large-scale quantum simulator on a diamond surface at room temperature. Nat. Phys. 9, 168–173 (2013).10.1038/nphys2519 ↗
50. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
51. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).10.1103/PhysRevB.50.17953 ↗
52. Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207–8215 (2003).10.1063/1.1564060 ↗
53. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
54. Szász, K., Hornos, T., Marsman, M. & Gali, A. Hyperfine coupling of point defects in semiconductors by hybrid density functional calculations: the role of core spin polarization. Phys. Rev. B 88, 075202 (2013).10.1103/PhysRevB.88.075202 ↗
55. Gali, A., Janzén, E., Deák, P., Kresse, G. & Kaxiras, E. Theory of spin-conserving excitation of the N-V− center in diamond. Phys. Rev. Lett. 103, 186404 (2009).10.1103/PhysRevLett.103.186404 ↗
56. Ivady, V., Simon, T., Maze, J. R., Abrikosov, I. A. & Gali, A. Pressure and temperature dependence of the zero-field splitting in the ground state of NV centers in diamond: a first-principles study. Phys. Rev. B 90, 235205 (2014).10.1103/PhysRevB.90.235205 ↗
57. Falk, A. L. et al. Electrically and mechanically tunable electron spins in silicon carbide color centers. Phys. Rev. Lett. 112, 187601 (2014).10.1103/PhysRevLett.112.187601 ↗
58. Van Duin, A. C., Dasgupta, S., Lorant, F. & Goddard, W. A. ReaxFF: a reactive force field for hydrocarbons. J. Phys. Chem. A 105, 9396–9409 (2001).10.1021/jp004368u ↗
59. Plimpton, S. Fast parallel algorithms for short-range molecular dynamics. J. Comput. Phys. 117, 1–19 (1995).10.1006/jcph.1995.1039 ↗
60. Van Duin, A. C. et al. ReaxFFSiO reactive force field for silicon and silicon oxide systems. J. Phys. Chem. A 107, 3803–3811 (2003).10.1021/jp0276303 ↗
61. Fogarty, J. C., Aktulga, H. M., Grama, A. Y., Van Duin, A. C. & Pandit, S. A. A reactive molecular dynamics simulation of the silica-water interface. J. Chem. Phys. 132, 174704 (2010).10.1063/1.3407433 ↗
62. El-Sayed, A.-M., Watkins, M. B., Afanas’ev, V. V. & Shluger, A. L. Nature of intrinsic and extrinsic electron trapping in SiO2. Phys. Rev. B 89, 125201 (2014).10.1103/PhysRevB.89.125201 ↗
63. Berendsen, H. J., Postma, J. V., Van Gunsteren, W. F., DiNola, A. & Haak, J. R. Molecular dynamics with coupling to an external bath. J. Chem. Phys. 81, 3684–3690 (1984).10.1063/1.448118 ↗
64. Ke, S.-h, Zi, J. & Zhang, K.-m et al. Electronic structures and band offsets of heterocrystalline superlattices (3C-AlN)3n/(2H-AlN)2n and (3C-SiC)3n/(2H-SiC)2n (n=1, 2, 3). Phys. Rev. B 54, 8789 (1996).10.1103/PhysRevB.54.8789 ↗