Ferroelectricity in bulk hafnia
Source abstract
Abstract
Ferroelectricity in bulk crystals of hafnium oxide demonstrates that these properties are not limited to films prepared by thin-film deposition techniques.
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Source: openaire · Quality: needs review · Source record ↗
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
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References (9)
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1. Böscke, T., Müller, J., Bräuhaus, D., Schröder, U. & Böttger, U. Appl. Phys. Lett. 99, 102903 (2011).10.1063/1.3634052 ↗
2. Materlik, R., Kunneth, C. & Kersch, A. J. Appl. Phys. 117, 134109 (2015).10.1063/1.4916707 ↗
3. Park, M. H. et al. Nanoscale 10, 716–725 (2018).10.1039/C7NR06342C ↗
4. Schroeder, U. et al. Jpn. J. Appl. Phys. 58, SL0801-1-7 (2019).10.7567/1347-4065/ab45e3 ↗
5. Xu, X. et al. Nat. Mater. https://doi.org/10.1038/s41563-020-00897-x (2021).10.1038/s41563-020-00897-x ↗
6. Ito, T. et al. J. Cryst. Growth 363, 264–269 (2013).10.1016/j.jcrysgro.2012.10.059 ↗
7. Mimura, T., Shimizu, T. & Funakubo, H. Appl. Phys. Lett. 115, 032901 (2019).10.1063/1.5097880 ↗
8. Trolier-McKinstry, S. Am. Ceram. Soc. Bull. 99, 22–23 (2020).
9. Toriumi, A. et al. in IEEE Int. Electron Devices Meeting 15.1.1–15.1.4 (2019); https://doi.org/10.1109/IEDM19573.2019.899346410.1109/IEDM19573.2019.8993464 ↗