Pushing towards the digital storage limit
Source abstract
Abstract
Ferroelectric materials promise computer memories with the speed of random access memories and the permanence of hard discs. But how will the microstructure of these materials influence the ultimate performance of ferroelectric memories?
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Source: openaire · Quality: needs review · Source record ↗
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices
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References (7)
Show source-provided references
1. Scott, J.F. & Araujo, C.A. Science 246, 1400–1405 (1989).10.1126/science.246.4936.1400 ↗
2. Chu, M.-W. et al. Nature Mater. 3, 87–90 (2004).10.1038/nmat1057 ↗
3. Waser, R. (ed.) Nanoelectronics and Information Technology (Wiley-VCH, Berlin 2003).
4. Junquera, J. & Ghosez, Ph. Nature 422, 506–509 (2003).10.1038/nature01501 ↗
5. Roelofs, A., Schneller, T., Szot, K. & Waser, R. Appl. Phys. Lett. 81, 5231–5233 (2002).10.1063/1.1534412 ↗
6. Neaton, J.B. & Rabe, K.M. Appl. Phys. Lett. 82, 1586–1588 (2002).10.1063/1.1559651 ↗
7. Balzar, D. et al. Jpn J. Appl. Phys. 41, 6628–6632 (2002).10.1143/JJAP.41.6628 ↗