Electronic two-terminal bistable graphitic memories
Source abstract
Abstract
Transistors are the basis for electronic switching and memory devices as they exhibit extreme reliabilities with on/off ratios of 10(4)-10(5), and billions of these three-terminal devices can be fabricated on single planar substrates. On the other hand, two-terminal devices coupled with a nonlinear current-voltage response can be considered as alternatives provided they have large and reliable on/off ratios and that they can be fabricated on a large scale using conventional or easily accessible methods. Here, we report that two-terminal devices consisting of discontinuous 5-10 nm thin films of graphitic sheets grown by chemical vapour deposition on either nanowires or atop planar silicon oxide exhibit enormous and sharp room-temperature bistable current-voltage behaviour possessing stable, rewritable, non-volatile and non-destructive read memories with on/off ratios of up to 10(7) and switching times of up to 1 micros (tested limit). A nanoelectromechanical mechanism is proposed for the unusually pronounced switching behaviour in the devices.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Quantum and electron transport phenomena · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Lau, C. N., Stewart, D. R., Williams, R. S. & Bockrath, M. Direct observation of nanoscale switching centers in metal/molecule/metal structures. Nano Lett. 4, 569–572 (2004).10.1021/nl035117a ↗
2. Terabe, K., Hasegawa, T., Nakayama, T. & Aono, M. Quantized conductance atomic switch. Nature 433, 47–50 (2005).10.1038/nature03190 ↗
3. Dong, Y., Yu, G., McAlpine, M. C., Lu, W. & Lieber, C. M. Si/a-Si core/shell nanowires as nonvolatile crossbar switches. Nano Lett. 8, 386–391 (2008).10.1021/nl073224p ↗
4. Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y & Tanaka, H. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide. Appl. Phys. Lett. 89, 103509 (2006).10.1063/1.2339032 ↗
5. Wuttig, M. & Yamada, N. Phase-change materials for rewriteable data storage. Nature Mater. 6, 824–832 (2007).10.1038/nmat2009 ↗
6. Li, J. & Zhang, Q. Room-temperature negative differential conductance in carbon nanotubes. Carbon 43, 667–670 (2005).10.1016/j.carbon.2004.10.019 ↗
7. Li, Y. F., Hatakeyama, R., Kaneko, T., Kato, T. & Okada, T. Negative differential resistance in tunneling transport through C60 encapsulated double-walled carbon nanotubes. Appl. Phys. Lett. 90, 073106 (2007).10.1063/1.2535817 ↗
8. Larade, B., Taylor, J., Mehrez, H. & Guo, H. Conductance, I–V curves, and negative differential resistance of carbon atomic wires. Phys. Rev. B 64, 075420 (2001).10.1103/PhysRevB.64.075420 ↗
9. Farajian, A. A., Esfarjani, K. & Kawazoe, Y. Nonlinear coherent transport through doped nanotube junctions. Phys. Rev. Lett. 82, 5084–5087 (1999).10.1103/PhysRevLett.82.5084 ↗
10. Léonard, F. & Tersoff, J. Negative differential resistance in nanotube devices. Phys. Rev. Lett. 85, 4767–4770 (2000).10.1103/PhysRevLett.85.4767 ↗
11. Rueckes, T. et al. Carbon nanotube-based nonvolatile random access memory for molecular computing. Science 289, 94–97 (2000).10.1126/science.289.5476.94 ↗
12. Franklin, N. R. et al. Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems. Appl. Phys. Lett. 81, 913–915 (2002).10.1063/1.1497710 ↗
13. Cha, S. N. et al. Fabrication of a nanoelectromechanical switch using a suspended carbon nanotube. Appl. Phys. Lett. 86, 083105 (2005).10.1063/1.1868064 ↗
14. Dujardin, E., Derycke, V., Goffman, M. F., Lefèvre, R. & Bourgoin, J. P. Self-assembled switches based on electroactuated multiwalled nanotubes. Appl. Phys. Lett. 87, 193107 (2005).10.1063/1.2126805 ↗
15. Deshpande, V. V. et al. Carbon nanotube linear bearing nanoswitches. Nano Lett. 6, 1092–1095 (2006).10.1021/nl052513f ↗
16. Jang, J. E. et al. Nanoscale memory cell based on a nanoelectromechanical switched capacitor. Nature Nanotech. 3, 26–30 (2008).10.1038/nnano.2007.417 ↗
17. Nguyen, D. N., Guertin, S. M., Swift, G. M. & Johnston, A. H. Radiation effects on advanced flash memories. IEEE Trans. Nucl. Sci. 46, 1744–1750 (1999).10.1109/23.819148 ↗
18. Cellere, G. et al. Total ionizing dose effects in NOR and NAND flash memories. IEEE Trans. Nucl. Sci. 54, 1066–1070 (2007).10.1109/TNS.2007.901199 ↗
19. Wang, X. et al. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. Phys. Rev. Lett. 100, 206803 (2008).10.1103/PhysRevLett.100.206803 ↗
20. Echtermeyer, T. J. et al. Nonvolatile switching in graphene field-effect devices. IEEE Electron Device Lett. 29, 952–954 (2008).10.1109/LED.2008.2001179 ↗
21. Collins, P. G., Hersam, M., Arnold, M., Martel, R. & Avouris, R. Current saturation and electrical breakdown in multiwalled carbon nanotubes. Phys. Rev. Lett. 86, 3128–3131 (2001).10.1103/PhysRevLett.86.3128 ↗
22. Standley, B. et al. Graphene-based atomic-scale switches. Nano Lett. 8, 3345–3349 (2008).10.1021/nl801774a ↗
23. Li, Y. B., Bando, Y. & Golberg, D. SiC–SiO2–C coaxial nanocables and chains of carbon nanotube-SiC heterojunctions. Adv. Mater 16, 93–96 (2004).10.1002/adma.200306117 ↗