Seeded growth of single-crystal black phosphorus nanoribbons
Source abstract
Abstract
Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (72)
Show source-provided references
1. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).10.1038/nnano.2014.35 ↗
2. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).10.1021/nn501226z ↗
3. Koenig, S. P., Doganov, R. A., Schmidt, H., Castro Neto, A. H. & Özyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014).10.1063/1.4868132 ↗
4. Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).
5. Ling, X., Wang, H., Huang, S., Xia, F. & Dresselhaus, M. S. The renaissance of black phosphorus. Proc. Natl Acad. Sci. USA 112, 4523–4530 (2015).10.1073/pnas.1416581112 ↗
6. Illarionov, Y. et al. Highly-stable black phosphorus field-effect transistors with low density of oxide traps. npj 2D Mater. Appl. 1, 23 (2017).10.1038/s41699-017-0025-3 ↗
7. Feng, X. et al. High mobility anisotropic black phosphorus nanoribbon field-effect transistor. Adv. Funct. Mater. 28, 1801524 (2018).10.1002/adfm.201801524 ↗
8. Tan, W. C. et al. Recent advances in black phosphorus-based electronic devices. Adv. Electron. Mater. 5, 1800666 (2019).10.1002/aelm.201800666 ↗
9. Buscema, M. et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14, 3347–3352 (2014).10.1021/nl5008085 ↗
10. Zhang, J. et al. Phosphorene nanoribbon as a promising candidate for thermoelectric applications. Sci. Rep. 4, 6452 (2014).
11. Wang, H. et al. Black phosphorus radio-frequency transistors. Nano Lett. 14, 6424–6429 (2014).10.1021/nl5029717 ↗
12. Wu, Q. et al. Electronic and transport properties of phosphorene nanoribbons. Phys. Rev. B 92, 035436 (2015).
13. Guo, Q. et al. Black phosphorus mid-infrared photodetectors with high gain. Nano Lett. 16, 4648–4655 (2016).10.1021/acs.nanolett.6b01977 ↗
14. Long, M. et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci. Adv. 3, e1700589 (2017).10.1126/sciadv.1700589 ↗
15. Yu, W. et al. Facile production of phosphorene nanoribbons towards application in lithium metal battery. Adv. Mater. 33, 2102083 (2021).10.1002/adma.202102083 ↗
16. Macdonald, T. J. et al. Phosphorene nanoribbon-augmented optoelectronics for enhanced hole extraction. J. Am. Chem. Soc. 143, 21549–21559 (2021).10.1021/jacs.1c08905 ↗
17. Nourbakhsh, Z. & Asgari, R. Excitons and optical spectra of phosphorene nanoribbons. Phys. Rev. B 94, 035437 (2016).10.1103/PhysRevB.94.035437 ↗
18. Yang, Y.-R., Zhang, Z.-Q., Gu, L. & Fu, H.-H. Spin-dependent Seebeck effect in zigzag black phosphorene nanoribbons. RSC Adv. 6, 44019–44023 (2016).10.1039/C6RA04069A ↗
19. Yang, G., Xu, S., Zhang, W., Ma, T. & Wu, C. Room-temperature magnetism on the zigzag edges of phosphorene nanoribbons. Phys. Rev. B 94, 075106 (2016).10.1103/PhysRevB.94.075106 ↗
20. Taghizadeh Sisakht, E., Fazileh, F., Zare, M. H., Zarenia, M. & Peeters, F. M. Strain-induced topological phase transition in phosphorene and in phosphorene nanoribbons. Phys. Rev. B 94, 085417 (2016).10.1103/PhysRevB.94.085417 ↗
21. Ren, Y., Cheng, F., Zhang, Z.H. & Zhou, G. Half metal phase in the zigzag phosphorene nanoribbon. Sci. Rep. 8, 2932 (2018).10.1038/s41598-018-21294-0 ↗
22. Hu, T., Wu, H., Zeng, H., Deng, K. & Kan, E. New ferroelectric phase in atomic-thick phosphorene nanoribbons: existence of in-plane electric polarization. Nano Lett. 16, 8015–8020 (2016).10.1021/acs.nanolett.6b04630 ↗
23. Hu, W., Lin, L., Zhang, R., Yang, C. & Yang, J. Highly efficient photocatalytic water splitting over edge-modified phosphorene nanoribbons. J. Am. Chem. Soc. 139, 15429–15436 (2017).10.1021/jacs.7b08474 ↗
24. Sun, J., Li, X., Ullrich, C. A. & Yang, J. Excitons in bent black phosphorus nanoribbons: multiple excitonic funnels. Mater. Today Adv. 7, 100096 (2020).10.1016/j.mtadv.2020.100096 ↗
25. Housecroft, C. E. & Sharpe, A. G. in Inorganic Chemistry 2nd edn, Ch. 14 (Pearson Prentice Hall, 2005).
26. Shriber, P., Samanta, A., Nessim, G. D. & Grinberg, I. First-principles investigation of black phosphorus synthesis. J. Phys. Chem. Lett. 9, 1759–1764 (2018).10.1021/acs.jpclett.8b00055 ↗
27. Pielmeier, M. R. P. & Nilges, T. Formation mechanisms for phosphorene and SnIP. Angew. Chem. Int. Ed. 60, 6816–6823 (2021).10.1002/anie.202016257 ↗
28. Bridgman, P. W. Two new modifications of phosphorus. J. Am. Chem. Soc. 36, 1344–1363 (1914).10.1021/ja02184a002 ↗
29. Lange, S., Schmidt, P. & Nilges, T. Au3SnP7@black phosphorus: an easy access to black phosphorus. Inorg. Chem. 46, 4028–4035 (2007).10.1021/ic062192q ↗
30. Wang, D. et al. Revisiting the growth of black phosphorus in Sn-I assisted reactions. Front. Chem. 7, 21 (2019).10.3389/fchem.2019.00021 ↗
31. Li, S. et al. New strategy for black phosphorus crystal growth through ternary clathrate. Cryst. Growth Des. 17, 6579–6585 (2017).10.1021/acs.cgd.7b01239 ↗
32. Li, C. et al. Synthesis of crystalline black phosphorus thin film on sapphire. Adv. Mater. 30, 1703748 (2018).10.1002/adma.201703748 ↗
33. Xu, Y. et al. Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon. Nat. Commun. 11, 1330 (2020).
34. Wu, Z. et al. Large-scale growth of few-layer two-dimensional black phosphorus. Nat. Mater. 20, 1203–1209 (2021).10.1038/s41563-021-01001-7 ↗
35. Chen, C. et al. Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release. Nat. Mater. 22, 717–724 (2023).10.1038/s41563-023-01516-1 ↗
36. Jiang, X. et al. Stable one-dimensional single crystalline black phosphorus nanowires for gas sensing. ACS Appl. Nano Mater. 3, 3402–3409 (2020).10.1021/acsanm.0c00152 ↗
37. Song, J. et al. Synthesis of highly stable one-dimensional black phosphorus/h-BN heterostructures: a novel flexible electronic platform. Chin. Phys. Lett. 37, 076203 (2020).10.1088/0256-307X/37/7/076203 ↗
38. Yu, Y. et al. Synthesis and electrical properties of single crystalline black phosphorus nanoribbons. CrystEngComm 22, 3824–3830 (2020).10.1039/D0CE00390E ↗
39. Zhao, M. et al. Growth mechanism and enhanced yield of black phosphorus microribbons. Cryst. Growth Des. 16, 1096–1103 (2016).10.1021/acs.cgd.5b01709 ↗
40. Li, J. et al. Growth of black phosphorus nanobelts and microbelts. Small 14, 1702501 (2017).
41. Liu, Z. et al. Unzipping of black phosphorus to form zigzag-phosphorene nanobelts. Nat. Commun. 11, 3917 (2020).
42. Watts, M. C. et al. Production of phosphorene nanoribbons. Nature 568, 216–220 (2019).10.1038/s41586-019-1074-x ↗
43. Macewicz, L., Pyrchla, K., Bogdanowicz, R., Sumanasekera, G. & Jasinski, J. B. Chemical vapor transport route toward black phosphorus nanobelts and nanoribbons. J. Phys. Chem. Lett. 12, 8347–8354 (2021).10.1021/acs.jpclett.1c02064 ↗
44. Melville, H. W. & Gray, S. C. The vapour pressure of red phosphorus. Trans. Faraday Soc. 32, 1026–1030 (1936).10.1039/tf9363201026 ↗
45. Xu, S. & Arnsdorf, M. F. Calibration of the scanning (atomic) force microscope with gold particles. J. Microsc. 173, 199–210 (1994).10.1111/j.1365-2818.1994.tb03442.x ↗
46. Güniat, L., Caroff, P. & Fontcuberta i Morral, A. Vapor phase growth of semiconductor nanowires: key developments and open questions. Chem. Rev. 119, 8958–8971 (2019).10.1021/acs.chemrev.8b00649 ↗
47. Markov, I. & Stoyanov, S. Mechanisms of epitaxial growth. Contemp. Phys. 28, 267–320 (1987).10.1080/00107518708219073 ↗
48. Ding, L. & Ding, F. Self-passivation leads to semiconducting edges of black phosphorene. Nanoscale Horiz. 6, 148–155 (2021).10.1039/D0NH00506A ↗
49. Liang, L. et al. Electronic bandgap and edge reconstruction in phosphorene materials. Nano Lett. 14, 6400–6406 (2014).10.1021/nl502892t ↗
50. Lee, S. et al. Atomically sharp, closed bilayer phosphorene edges by self-passivation. ACS Nano 16, 12822–12830 (2022).10.1021/acsnano.2c05014 ↗
51. Choi, H. H., Cho, K., Frisbie, C. D., Sirringhaus, H. & Podzorov, V. Critical assessment of charge mobility extraction in FETs. Nat. Mater. 17, 2–7 (2018).10.1038/nmat5035 ↗
52. Urban, F., Lupina, G., Grillo, A., Martucciello, N. & Di Bartolomeo, A. Contact resistance and mobility in back-gate graphene transistors. Nano Express 1, 010001 (2020).10.1088/2632-959X/ab7055 ↗
53. He, J., Zhang, X., Wang, Y. & Huang, R. New method for extraction of MOSFET parameters. IEEE Electron Device Lett. 22, 597–599 (2001).10.1109/55.974590 ↗
54. Xu, Y., Minari, T., Tsukagoshi, K., Chroboczek, J. A. & Ghibaudo, G. Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors. J. Appl. Phys. 107, 114507 (2010).10.1063/1.3432716 ↗
55. Liu, H., Neal, A. T. & Ye, P. D. Channel length scaling of MoS2 MOSFETs. ACS Nano 6, 8563–8569 (2012).10.1021/nn303513c ↗
56. Chu, T., Vega, R. A., Alptekin, E., Guo, D. & Shang, H. Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction. J. Appl. Phys. 117, 064507 (2015).10.1063/1.4908111 ↗
57. Gunawan, O. et al. Measurement of carrier mobility in silicon nanowires. Nano Lett. 8, 1566–1571 (2008).10.1021/nl072646w ↗
58. Bang, K. et al. Effect of ribbon width on electrical transport properties of graphene nanoribbons. Nano Converg. 5, 7 (2018).10.1186/s40580-018-0139-0 ↗
59. Brown, A. & Rundqvist, S. Refinement of the crystal structure of black phosphorus. Acta Crystallogr. 19, 684–685 (1965).10.1107/S0365110X65004140 ↗
60. LeBeau, J. M., Findlay, S. D., Allen, L. J. & Stemmer, S. Quantitative atomic resolution scanning transmission electron microscopy. Phys. Rev. Lett. 100, 206101 (2008).10.1103/PhysRevLett.100.206101 ↗
61. Kauko, H. et al. Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy. Appl. Phys. Lett. 103, 232111 (2013).10.1063/1.4838556 ↗
62. Wang, Y., Lv, J., Zhu, L. & Ma, Y. Crystal structure prediction via particle-swarm optimization. Phys. Rev. B 82, 094116 (2010).10.1103/PhysRevB.82.094116 ↗
63. Grimme, S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787–1799 (2006).10.1002/jcc.20495 ↗
64. Kresse, G. & Hafner, J. Ab initio molecular dynamics for open-shell transition metals. Phys. Rev. B 48, 13115–13118 (1993).10.1103/PhysRevB.48.13115 ↗
65. Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996).10.1016/0927-0256(96)00008-0 ↗
66. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
67. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).10.1103/PhysRevB.50.17953 ↗
68. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
69. Behnam, A. et al. Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition. Nano Lett. 12, 4424–4430 (2012).10.1021/nl300584r ↗
70. Franklin, A. D. Nanomaterials in transistors: from high-performance to thin-film applications. Science 349, aab2750 (2015).10.1126/science.aab2750 ↗
71. Shahidi, G. G., Antoniadis, D. A. & Smith, H. I. Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers. IEEE Electron Device Lett. 9, 94–96 (1988).10.1109/55.2051 ↗
72. Chen, X. et al. Large-velocity saturation in thin-film black phosphorus transistors. ACS Nano 12, 5003–5010 (2018).10.1021/acsnano.8b02295 ↗