Atomic-scale interface strengthening unlocks efficient and durable Mg-based thermoelectric devices
Source abstract
Abstract
Solid-state thermoelectric technology presents a compelling solution for converting waste heat into electrical energy. However, its widespread application is hindered by long-term stability issues, particularly at the electrode-thermoelectric material interface. Here we address this challenge by constructing an atomic-scale direct bonding interface. By forming robust chemical bonds between Co and Sb atoms, we develop MgAgSb/Co thermoelectric junctions with a low interfacial resistivity (2.5 µΩ cm2), high bonding strength (60.6 MPa) and high thermal stability at 573 K. This thermally stable and ohmic contact interface enables MgAgSb-based thermoelectric modules to achieve a conversion efficiency of 10.2% at a temperature difference of 287 K and to exhibit negligible degradation over 1,440 h of thermal cycling. Our findings underscore the critical role of atomic-scale interface engineering in advancing thermoelectric semiconductor devices, enabling more efficient and durable thermoelectric modules.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Hydrogen Storage and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (48)
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