Ferroelectric polarization reversal via successive ferroelastic transitions
Source abstract
Abstract
Switchable polarization makes ferroelectrics a critical component in memories, actuators and electro-optic devices, and potential candidates for nanoelectronics. Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In this work, a combination of thin-film epitaxy, macro- and nanoscale property and switching characterization, and molecular dynamics simulations are used to elucidate the nature of switching in PbZr(0.2)Ti(0.8)O3 thin films. Differences are demonstrated between (001)-/(101)- and (111)-oriented films, with the latter exhibiting complex, nanotwinned ferroelectric domain structures with high densities of 90° domain walls and considerably broadened switching characteristics. Molecular dynamics simulations predict both 180° (for (001)-/(101)-oriented films) and 90° multi-step switching (for (111)-oriented films) and these processes are subsequently observed in stroboscopic piezoresponse force microscopy. These results have implications for our understanding of ferroelectric switching and offer opportunities to change domain reversal speed.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
Show source-provided references
1. Hoffman, J. et al. Ferroelectric field effect transistors for memory applications. Adv. Mater. 22, 2957–2961 (2010).10.1002/adma.200904327 ↗
2. Scott, J. F. Applications of modern ferroelectrics. Science 315, 954–959 (2012).10.1126/science.1129564 ↗
3. Eom, C. B. & Trolier-McKinstry, S. Thin-film piezoelectric MEMS. MRS Bull. 37, 1007–1021 (2012).10.1557/mrs.2012.273 ↗
4. Wessels, B. W. Ferroelectric epitaxial thin-films for integrated optics. Annu. Rev. Mater. Res. 37, 659–679 (2007).10.1146/annurev.matsci.37.052506.084226 ↗
5. Dawber, M., Rabe, K. M. & Scott, J. F. Physics of thin-film ferroelectric oxides. Rev. Mod. Phys. 77, 1083–1130 (2005).10.1103/RevModPhys.77.1083 ↗
6. Martin, L. W. & Schlom, D. G. Advanced synthesis techniques and routes to new single-phase multiferroics. Curr. Opin. Solid State Mater. Sci. 16, 199–215 (2012).10.1016/j.cossms.2012.03.001 ↗
7. Nagarajan, V. et al. Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films. J. Appl. Phys. 86, 595–602 (1999).10.1063/1.370772 ↗
8. Li, Y. L., Hu, S. Y., Liu, Z. K. & Chen, L. Q. Effect of electrical boundary conditions on ferroelectric domain structures in thin films. Appl. Phys. Lett. 81, 427–429 (2002).10.1063/1.1492025 ↗
9. Pertsev, N. A., Arlt, G. & Zembilgotov, A. G. Domain-wall and intrinsic contributions to the dielectric response of epitaxial ferroelectric films. Microelectron. Eng. 29, 135–140 (1995).10.1016/0167-9317(95)00131-X ↗
10. Xu, F. et al. Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films. J. Appl. Phys. 89, 1336–1348 (2001).10.1063/1.1325005 ↗
11. Karthik, J., Damodaran, A. R. & Martin, L. W. Effect of 90° domain walls on the low-field permittivity of PbZr0.2Ti0.8O3 thin films. Phys. Rev. Lett. 108, 167601 (2012).10.1103/PhysRevLett.108.167601 ↗
12. Kim, D. J., Maria, J. P., Kingon, A. I. & Streiffer, S. K. Evaluation of intrinsic and extrinsic contributions to the piezoelectric properties of Pb(Zr1−xTix)O3 thin films as a function of composition. J. Appl. Phys. 93, 5568–5575 (2003).10.1063/1.1566478 ↗
13. Bruchhaus, R., Pitzer, D., Schreiter, M. & Wersing, W. Optimized PZT thin films for pyroelectric IR detector arrays. J. Electroceram. 3, 151–162 (1999).10.1023/A:1009995126986 ↗
14. Karthik, J. & Martin, L. W. Pyroelectric properties of polydomain epitaxial Pb(Zr1−xTix)O3 thin films. Phys. Rev. B 84, 024102 (2011).10.1103/PhysRevB.84.024102 ↗
15. Pertsev, N. A., Kukhar, V. G., Kohlstedt, H. & Waser, R. Phase diagrams and physical properties of single-domain epitaxial Pb(Zr1−xTix)O3 thin films. Phys. Rev. B 67, 054107 (2003).10.1103/PhysRevB.67.054107 ↗
16. Pertsev, N. A. & Zembilgotov, A. G. Domain populations in epitaxial ferroelectric thin films: Theoretical calculations and comparison with experiment. J. Appl. Phys. 80, 6401–6406 (1996).10.1063/1.363659 ↗
17. Saito, K., Kurosawa, T., Akai, T., Oikawa, T. & Funakubo, H. Structural characterization and 90 degrees domain contribution to ferroelectricity of epitaxial Pb(Zr0.35, Ti0.65)O3 thin films. J. Appl. Phys. 93, 545–550 (2003).10.1063/1.1530727 ↗
18. Oikawa, T., Aratani, M., Funakubo, H., Saito, K. & Mizuhira, M. Composition and orientation dependence of electrical properties of epitaxial Pb(ZrxTi1−x)O3 thin films grown using metalorganic chemical vapor deposition. J. Appl. Phys. 95, 3111–3115 (2004).10.1063/1.1645646 ↗
19. Xu, R., Karthik, J., Damodaran, A. R. & Martin, L. W. Stationary domain wall contribution to enhanced ferroelectric susceptibility. Nature Commun. 5, 3120 (2014).10.1038/ncomms4120 ↗
20. Bernal, A., Zhang, S. J. & Bassiri-Gharb, N. Effects of orientation and composition on the extrinsic contributions to the dielectric response of relaxor-ferroelectric single crystals. Appl. Phys. Lett. 95, 142911 (2009).10.1063/1.3245316 ↗
21. Wada, S., Yako, K., Kakemoto, H., Tsurumi, T. & Kiguchi, T. Enhanced piezoelectric properties of barium titanate single crystals with different engineered-domain sizes. J. Appl. Phys. 98, 014109 (2005).10.1063/1.1957130 ↗
22. Grigoriev, A. et al. Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti)O3 thin films. Phys. Rev. Lett. 96, 187601 (2006).10.1103/PhysRevLett.96.187601 ↗
23. Jo, J. Y. et al. Nanosecond dynamics of ferroelectric/dielectric superlattices. Phys. Rev. Lett. 107, 055501 (2011).10.1103/PhysRevLett.107.055501 ↗
24. Zubko, P., Stucki, N., Lichtensteiger, C. & Triscone, J. M. X-ray diffraction studies of 180° ferroelectric domains in PbTiO3/SrTiO3 superlattices under an applied electric field. Phys. Rev. Lett. 104, 187601 (2010).10.1103/PhysRevLett.104.187601 ↗
25. Kalinin, S. V. et al. Defect-mediated polarization switching in ferroelectrics and related materials: From mesoscopic mechanisms to atomistic control. Adv. Mater. 22, 314–322 (2010).10.1002/adma.200900813 ↗
26. Gruverman, A. et al. Direct studies of domain switching dynamics in thin film ferroelectric capacitors. Appl. Phys. Lett. 87, 082902 (2005).10.1063/1.2010605 ↗
27. Nelson, C. T. et al. Domain dynamics during ferroelectric switching. Science 334, 968–971 (2011).10.1126/science.1206980 ↗
28. Winkler, C. R., Damodaran, A. R., Karthik, J., Martin, L. W. & Taheri, M. L. Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM. Micron 43, 1121–1126 (2012).10.1016/j.micron.2012.02.009 ↗
29. Chang, H. J. et al. Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy. J. Appl. Phys. 110, 052014 (2011).10.1063/1.3623779 ↗
30. Phillpot, S. R., Sinnott, S. B. & Asthagiri, A. Atomic-level simulation of ferroelectricity in oxides: Current status and opportunities. Annu. Rev. Mater. Res. 37, 239–270 (2007).10.1146/annurev.matsci.37.052506.084206 ↗
31. Sepliarsky, M., Phillpot, S. R., Wolf, D., Stachiotti, M. G. & Migoni, R. L. Atomic-level simulation of ferroelectricity in perovskite solid solutions. Appl. Phys. Lett. 76, 3986–3988 (2000).10.1063/1.126843 ↗
32. Liu, S., Grinberg, I., Takenaka, H. & Rappe, A. M. Reinterpretation of bond-valence model with bond-order formalism: An improved bond-valence-based interatomic potential for PbTiO3 . Phys. Rev. B 88, 104102 (2013).10.1103/PhysRevB.88.104102 ↗
33. Liu, S., Grinberg, I. & Rappe, A. M. Development of a bond-valence based interatomic potential for BiFeO3 for accurate molecular dynamics simulations. J. Phys. Condens. Matter. 25, 102202 (2013).10.1088/0953-8984/25/10/102202 ↗
34. Sepliarsky, M., Stachiotti, M. G. & Migoni, R. L. Surface reconstruction and ferroelectricity in PbTiO3 thin films. Phys. Rev. B 72, 014110 (2005).10.1103/PhysRevB.72.014110 ↗
35. Takenaka, H., Grinberg, I. & Rappe, A. M. Anisotropic local correlations and dynamics in a relaxor ferroelectric. Phys. Rev. Lett. 110, 147602 (2013).10.1103/PhysRevLett.110.147602 ↗
36. Shin, Y. H., Grinberg, I., Chen, I. W. & Rappe, A. M. Nucleation and growth mechanism of ferroelectric domain-wall motion. Nature 449, 881–887 (2007).10.1038/nature06165 ↗
37. Roytburd, A. L. Equilibrium structure of epitaxial layers. Phys. Status Solidi A 37, 329–339 (1976).10.1002/pssa.2210370141 ↗
38. Ouyang, J. et al. Engineering of self-assembled domain architectures with ultra-high piezoelectric response in epitaxial ferroelectric films. Adv. Funct. Mater. 17, 2094–2100 (2007).10.1002/adfm.200600823 ↗
39. Romanov, A. E., Vojta, A., Pompe, W., Lefevre, M. J. & Speck, J. S. Domain patterns in (111) oriented tetragonal ferroelectric films. Phys. Status Solidi A 172, 225–253 (1999).10.1002/(SICI)1521-396X(199903)172:1<225::AID-PSSA225>3.0.CO;2-2 ↗
40. Karthik, J., Damodaran, A. R. & Martin, L. W. Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO3 using an MgO mask. Adv. Mater. 24, 1610–1615 (2012).10.1002/adma.201104697 ↗
41. Bassiri-Gharb, N. et al. Domain wall contributions to the properties of piezoelectric thin films. J. Electroceram. 19, 47–65 (2007).10.1007/s10832-007-9001-1 ↗
42. Sluka, T., Tagantsev, A. K., Dmajanovic, D., Gureev, M. & Setter, N. Enhanced electromechanical response of ferroelectrics due to charged domain walls. Nature Commun. 3, 748 (2012).10.1038/ncomms1751 ↗
43. Kamel, T. M. & de With, G. Double peak switching current in soft ferroelectric lead zirconate titanate. J. Appl. Phys. 102, 044118 (2007).10.1063/1.2767188 ↗
44. Yin, J. & Cao, W. Polarization reversal study using ultrasound. Appl. Phys. Lett. 79, 4556–4558 (2001).10.1063/1.1428629 ↗
45. Daniels, J. E. et al. Neutron diffraction study of the polarization reversal mechanism in [111]C-oriented Pb(Zn1/3Nb2/3)O3−xPbTiO3 . J. Appl. Phys. 101, 104108 (2007).10.1063/1.2733636 ↗
46. Pramanick, A., Prewitt, A. D., Forrester, J. S. & Jones, J. L. Domains, domain walls and defects in perovskite ferroelectric oxides: A review of present understanding and recent contributions. Crit. Rev. Solid State Mater. Sci. 37, 243–275 (2012).10.1080/10408436.2012.686891 ↗
47. Nagarajan, V. et al. Dynamics of ferroelastic domains in ferroelectric thin films. Nature Mater. 2, 43–47 (2003).10.1038/nmat800 ↗
48. Anbusathaiah, V. et al. Labile ferroelastic nanodomains in bilayered ferroelectric thin films. Adv. Mater. 21, 3497–3502 (2009).10.1002/adma.200803701 ↗
49. Meyer, B. & Vanderbilt, D. Ab initio study of ferroelectric domain walls in PbTiO3 . Phys. Rev. B 65, 104111 (2002).10.1103/PhysRevB.65.104111 ↗
50. Gao, P. et al. Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching. Nature Commun. 4, 2791 (2013).10.1038/ncomms3791 ↗