journal article·2023-11-20

Tunnelling-recombination layer made of polycrystalline silicon for perovskite tandem photovoltaics

Authors not provided

Nature Energy· Volume 8· Issue 11
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence · solar cell performance optimization

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (5)

Show source-provided references
1. Mariotti, S. et al. Interface engineering for high-performance, triple-halide perovskite–silicon tandem solar cells. Science 381, 63–69 (2023). This paper reports a noteworthy efficiency of 32.5% in perovskite/c-Si TSCs featuring a conventional TCO RL.10.1126/science.adf5872 ↗
2. Aydin, E. et al. Interplay between temperature and bandgap energies on the outdoor performance of perovskite/silicon tandem solar cells. Nat. Energy 5, 851–859 (2020). This paper presents a perovskite/c-Si TSC with a nc-Si:H(p+)/nc-Si:H(n+) TRL.10.1038/s41560-020-00687-4 ↗
3. Zheng, J. et al. Balancing charge-carrier transport and recombination for perovskite/TOPCon tandem solar cells with double-textured structures. Adv. Energy Mater. 13, 2203006 (2022). This paper presents the optimization of passivation and contact performance for perovskite/TOPCon TSCs.10.1002/aenm.202203006 ↗
4. Ballif, C. et al. Status and perspectives of crystalline silicon photovoltaics in research and industry. Nat. Rev. Mater. 7, 597–616 (2022). A review article that presents the importance of TOPCon solar cells in the photovoltaics industry.10.1038/s41578-022-00423-2 ↗
5. Luderer, C. et al. Passivating and low-resistive poly-Si tunneling junction enabling high-efficiency monolithic perovskite/silicon tandem solar cells. Appl. Phys. Lett. 115, 182105 (2019). This paper presents a high-quality poly-Si(p+)/poly-Si(n+) tunnelling junction with good passivation and low resistance.10.1063/1.5120552 ↗