Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
2. High-performance single layered WSe₂ p-FETs with chemically doped contacts10.1021/nl301702r ↗
3. Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories10.1038/s41563-018-0234-y ↗
4. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions10.1038/s41586-018-0129-8 ↗
5. Electrical contacts to two-dimensional semiconductors10.1038/nmat4452 ↗
6. Ultrasensitive photodetectors based on monolayer MoS210.1038/nnano.2013.100 ↗
7. MoS2 transistors operating at gigahertz frequencies10.1021/nl5028638 ↗
8. Sze · 2021
9. The physics and chemistry of the Schottky barrier height10.1063/1.4858400 ↗
10. Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter10.1007/BF01340116 ↗
11. Mott · Proc. R. Soc. Lond. Ser. A Math. Phys. Sci. · 1939 · 171
12. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes10.1088/0022-3727/4/10/319 ↗
13. A modified forwardI‐Vplot for Schottky diodes with high series resistance10.1063/1.325607 ↗
14. InSe Schottky diodes based on Van Der Waals contacts10.1002/adfm.202001307 ↗
15. Integrated charge excitation triboelectric nanogenerator10.1016/j.scib.2019.06.021 ↗
16. Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials10.1038/s41524-017-0059-2 ↗
17. A synaptic transistor based on quasi-2D molybdenum oxide
18. Stretching and breaking of ultrathin MoS210.1021/nn203879f ↗
19. 2D material based synaptic devices for neuromorphic computing
20. Fused computing and storage in a 2D transistor10.1038/s41565-019-0476-0 ↗
21. P.-A. Chen, R.-J. Ge, J.-W. Lee, C.-H. Hsu, W.-C. Hsu, D. Akinwande, M.-H. Chiang, An RRAM with a 2D material embedded double switching layer for neuromorphic computing, in: Proceedings of the 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) (2018) 1. https://doi.org/10.1109/NMDC.2018.8605915.10.1109/NMDC.2018.8605915 ↗
22. Phosphorene: an unexplored 2D semiconductor with a high hole mobility10.1021/nn501226z ↗
23. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
24. Contact engineering for 2D materials and devices10.1039/C7CS00828G ↗
25. Surface states and rectification at a metal semi-conductor contact10.1103/PhysRev.71.717 ↗
26. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces10.1021/nl403465v ↗
27. Fermi Level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides10.1021/acsnano.6b07159 ↗
28. Origins of fermi level pinning between tungsten dichalcogenides (WS2, WTe2) and bulk metal contacts: interface chemistry and band alignment10.1021/acs.jpcc.0c01646 ↗
29. Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors10.1039/D0NR01379J ↗
30. Metal–2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning10.1039/C9TC06331E ↗
31. Dimensionality-reduced fermi level pinning in coplanar 2D heterojunctions10.1021/acs.jpclett.0c03663 ↗
32. Polarity control and weak fermi-level pinning in PdSe2 transistors10.1021/acsami.1c08028 ↗
33. Shao · Energy Environ. Mater. · 2021 · 27310.1002/eem2.12218 ↗
34. Carbon-based nanomaterials as contacts to graphene nanoribbons10.1063/1.3533803 ↗
35. Proposal for all-graphene monolithic logic circuits10.1063/1.4818462 ↗
36. Determination of work function of graphene under a metal electrode and its role in contact resistance10.1021/nl300266p ↗
37. Control of radiation damage in MoS(2) by graphene encapsulation10.1021/nn4044035 ↗
38. How to read dental films for periodontal diseases10.1016/0040-6090(83)90430-3 ↗
39. Influence of strain and metal thickness on metal-MoS₂ contacts10.1063/1.4893875 ↗
40. One-dimensional electrical contact to a two-dimensional material10.1126/science.1244358 ↗
41. Atomically thin ohmic edge contacts between two-dimensional materials10.1021/acsnano.6b02879 ↗
42. Seredinski · AIP Adv. · 2021
43. Edge contact for carrier injection and transport in MoS2 field-effect transistors10.1021/acsnano.9b05965 ↗
44. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier10.1126/sciadv.1600069 ↗
45. Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy10.1038/nnano.2017.161 ↗
46. Phase engineering of nanomaterials10.1038/s41570-020-0173-4 ↗
47. Phase engineering of transition metal dichalcogenides10.1039/C5CS00151J ↗
48. Recent progress of TMD nanomaterials: phase transitions and applications10.1039/C9NR08313H ↗
49. Comprehensive assessment of Nile tilapia skin (Oreochromis niloticus) collagen hydrogels for wound dressings
50. Local engineering of topological phase in monolayer MoS210.1016/j.scib.2019.10.004 ↗
51. Simultaneous synthesis and integration of two-dimensional electronic components10.1038/s41928-019-0233-2 ↗
52. Millimeter-scale single-crystalline semiconducting MoTe2 via solid-to-solid phase transformation10.1021/jacs.8b12230 ↗
53. Correlating the electronic structures of metallic/semiconducting MoTe2 interface to its atomic structures
54. In-plane Schottky-barrier field-effect transistors based on 1T/2Hheterojunctions of transition-metal dichalcogenides10.1103/PhysRevB.96.165402 ↗
55. Gate-tunable interfacial properties of in-plane ML MX21T′–2H heterojunctions10.1039/C8TC01106K ↗
56. 2D materials and van der Waals heterostructures10.1126/science.aac9439 ↗
57. Li · Nat. Commun. · 2016 · 7 · 1
58. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties10.1080/00018736900101307 ↗
59. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers10.1038/ncomms5214 ↗
60. Raman study and lattice dynamics of single molecular layers ofMoS210.1103/PhysRevB.44.3955 ↗
61. Phase stability and Raman vibration of the molybdenum ditelluride (MoTe2) monolayer10.1039/C5CP01649E ↗
62. Enhanced catalytic activity in strained chemically exfoliated WS₂ nanosheets for hydrogen evolution10.1038/nmat3700 ↗
63. Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides10.1039/C8SC02609B ↗
64. Plasma renin concentration in human hypertension. IV: renin in relation to treatment and prognosis10.1107/S0365110X66000513 ↗
65. Huang · Nat. Commun. · 2015 · 6 · 1
66. Metallic MoS2 for high performance energy storage and energy conversion10.1002/smll.201800640 ↗
67. Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS210.1038/nnano.2014.64 ↗
68. Argon plasma induced phase transition in monolayer MoS210.1021/jacs.7b05765 ↗
69. Device technology. Phase patterning for ohmic homojunction contact in MoTe₂10.1126/science.aab3175 ↗
70. Structural phase transition in monolayer MoTe2 driven by electrostatic doping10.1038/nature24043 ↗
71. Superconducting dome in a gate-tuned band insulator10.1126/science.1228006 ↗
72. Optical properties and band gap of single- and few-layer MoTe2 crystals10.1021/nl502557g ↗
73. Room temperature semiconductor-metal transition of MoTe2 thin films engineered by strain10.1021/acs.nanolett.5b03481 ↗
74. Structural destabilization induced by lithium intercalation in MoS2 and related compounds10.1139/p83-013 ↗
75. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors10.1038/nmat4080 ↗
76. Single-layer MoS210.1016/0025-5408(86)90011-5 ↗
77. Phase-selective synthesis of 1T’ MoS2 monolayers and heterophase bilayers10.1038/s41563-018-0187-1 ↗
78. Scaling-up atomically thin coplanar semiconductor-metal circuitry via phase engineered chemical assembly10.1021/acs.nanolett.9b02006 ↗
79. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe210.1126/science.abf5825 ↗
80. Atom-by-atom fabrication with electron beams10.1038/s41578-019-0118-z ↗
81. Atomic-scale structure of Mo6S6 nanowires10.1021/nl802384n ↗
82. Electron transport in a multichannel one-dimensional conductor: molybdenum selenide nanowires10.1103/PhysRevLett.96.076601 ↗
83. Liu · Nat. Commun. · 2013 · 4 · 1
84. Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers10.1038/nnano.2014.81 ↗
85. Atom-by-atom fabrication of monolayer molybdenum membranes
86. First principles study of electronic and mechanical properties of molybdenum selenide type nanowires10.1103/PhysRevB.74.235433 ↗
87. Assembling nanowires from Mo-S clusters and effects of iodine doping on electronic structure10.1021/nl0706547 ↗
88. Quantized conductance through individual rows of suspended gold atoms10.1038/27399 ↗
89. Atomic scale microstructure and properties of Se-deficient two-dimensional MoSe210.1021/acsnano.5b00410 ↗
90. Aligned graphene nanoribbons and crossbars from unzipped carbon nanotubes10.1007/s12274-010-1043-z ↗
91. Armchair graphene nanoribbons: electronic structure and electric-field modulation10.1103/PhysRevB.77.245434 ↗
92. Energy gaps in graphene nanoribbons10.1103/PhysRevLett.97.216803 ↗
93. Energy band-gap engineering of graphene nanoribbons10.1103/PhysRevLett.98.206805 ↗
94. Chemically derived, ultrasmooth graphene nanoribbon semiconductors10.1126/science.1150878 ↗
95. Wei · Nat. Commun. · 2013 · 4 · 1
96. Vacancy and interstitial defects at graphite surfaces:Scanning tunneling microscopic study of the structure, electronic property, and yield for ion-induced defect creation10.1103/PhysRevB.60.6007 ↗
97. The contrast mechanism in low voltage scanning electron microscopy of single-walled carbon nanotubes10.1088/0957-4484/17/1/046 ↗
98. Mechanism of bright selective imaging of single-walled carbon nanotubes on insulators by scanning electron microscopy10.1063/1.1667608 ↗
99. Seamless staircase electrical contact to semiconducting graphene nanoribbons10.1021/acs.nanolett.7b02938 ↗
100. Atomically precise bottom-up fabrication of graphene nanoribbons10.1038/nature09211 ↗