journal article·2021-09-24Open access

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices

Milos Krbal, Vit Prokop, Alexey A. Kononov, Jhonatan Rodriguez Pereira, Jan Mistrik, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yi Shuang, Yuji Sutou, Stepan A. Rozhkov, Jens R. Stellhorn, Shinjiro Hayakawa, Igor Pis, Federica Bondino

ACS Applied Nano Materials· Volume 4· Issue 9

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS2, and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 °C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS2 along the ⟨002⟩ crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for other 2D materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nano- and optoelectronic devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center of Materials and Nanotechnologies (CEMNAT), Faculty of Chemical Technology, University of Pardubice, Legions Square 565, 530 02 Pardubice, Czech Republic

Department of Physical Electronics, Herzen State Pedagogical University of Russia, 48 Moika Emb., St. Petersburg 191186, Russia

Institute of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentska 95, Pardubice 53210, Czech Republic

Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Ibaraki, Japan

Faculty of Science and Technology, Department of Electronics and Electrical Engineering, Keio University, 223-8522 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan

Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11, Aoba-yama, Aoba-ku, Sendai 980-8579, Japan

Department of Applied Chemistry, Graduate School of Advanced Science and Engineering, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan

CNR-IOM, TASC Laboratory, 34149 Basovizza, Trieste, Italy

Funding

Ministerstvo ??kolstv??, Ml??de??e a T??lov??chovy · Grantov?? Agentura ??esk?? Republiky · Russian Foundation for Basic Research · Japan Society for the Promotion of Science · European Free Electron Lasers · HiSOR · SPring8

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