Onset of in-plane ferroelectricity in the vanadium dioxide (VO 2 ) mott insulator for in-memory computing applications
Source abstract
Abstract
Abstract We present experimental results on VO 2 , which is the most utilized Mott material, grown by atomic layer deposition on single-crystalline Si (100) (VO 2 /Si) wafers and followed by thermal treatment at 500 °C for different times: 30, 60 and 90 min. All these structures have shown in-plane ferroelectricity, the best results being obtained for VO 2 treated thermically at 500 °C during 60 min. The remanent polarization in this case is 100 μ C cm −2 at room temperature at coercive voltages ±10 V. Current-voltage and polarization-voltage dependences at various temperatures have shown that VO 2 has a reversible insulator-metal transition at 66 °C.
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Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Chemical and Physical Properties of Materials · Advanced Materials and Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Institute for Research and Development in Microtechnologies, IMT-Bucharest
Tyndall National Institute-University College Cork, Lee Maltings, Dyke Parade
University of Bucharest, Physics Faculty, PO Box MG-11
Academy of Romanian Scientists, Str. Ilfov, Nr. 3
National Institute of Materials Physics, Atomistilor 405A
Université de Toulouse, CNRS
Funding
CFA Midisup and Erasmus+ · Renatech French national network · Ministry of Education and Research · LAAS-CNRS micro
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Show source-provided references
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