CsPbBr 3 /p-Si membrane heterojunction photodiode: photodetection characteristics and C – V analysis
Source abstract
Abstract
Abstract We report the fabrication and physical characterization of a self-driven heterojunction photodetector based on an all-inorganic CsPbBr 3 thin film interfaced with a lightweight, freestanding p-type single-crystal silicon membrane (p-Si). Different from conventional rigid substrates, this membrane-based architecture leverages the superior carrier mobility and mechanical resilience of monocrystalline silicon for flexible, high-sensitivity optoelectronics. Beyond standard characterization, an Elliott-type quantum well model was employed to resolve the excitonic nature of the CsPbBr 3 nanocrystals, revealing a significant exciton binding energy of 340 meV and a quasi-particle bandgap of 2.91 eV. Under zero-bias conditions, the device exhibits a robust broadband response with a peak responsivity of 0.1 A/W and a detectivity of 1.75 × 10 11 Jones. Crucially, the strong built-in potential ( V bi = 0.91 V) facilitates efficient exciton dissociation, overcoming Coulombic attraction even at zero bias to enable high-performance self-powered operation. To elucidate the underlying transport physics, we conduct an in-depth study of the frequency-dispersive capacitance–voltage ( C – V ) characteristics. Our study reveals how interface states and deep-level defects dictate the steady-state photocurrent and transient kinetics (∼130 ms). C – V analysis further enabled the quantification of the interface trap density ( D it ∼ 10 11 eV −1 cm −2 ), confirming significant interfacial defect contributions to the non-ideal device behavior. By employing a modified depletion approximation incorporating the diode ideality factor ( η ), we decouple parasitic trap-assisted processes from the intrinsic junction capacitance to resolve a precise V bi of 0.91 V. This rigorous analytical approach provides critical insights into the non-ideal junction physics governing the performance of self-powered, membrane-based perovskite optoelectronics.
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Research context
OpenAlex topics: Perovskite Materials and Applications · 2D Materials and Applications · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Indian Institute of Technology Kharagpur
Currently at Centre of Applied Research in Electronics (CARE), Indian Institute of Technology Delhi
Polytechnique Montreal
Funding
Department of Science and Technology, Ministry of Science and Technology, India
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