Enhanced electrical performance of tellurium FETs via ultra-thin atomic-layer-deposited Al 2 O 3 interlayer for Fermi-level de-pinning
Source abstract
Abstract
Abstract In this study, we demonstrate that an atomic-layer-deposited Al 2 O 3 dielectric interlayer uniformly covering both the channel and contact regions effectively reduces the Schottky barrier height (SBH) of tellurium (Te) field-effect transistors (FETs), providing a facile strategy to mitigate Fermi-level pinning. An ultrathin 3 nm Al 2 O 3 interlayer inserted between the metal electrode and Te channel leads to significantly better electrical performance than that of Te FETs with channel-only Al 2 O 3 passivation. Specifically, the drain current density increases by a factor of 2.5, while the hysteresis window of the threshold voltage is reduced from 14.4 to 8.1 V. Transmission line measurements reveal a substantial decrease in contact resistance from 23.9 to 1.47 MΩ· μ m, which is attributed to the reduction in SBH from 133 to 49 meV. These results highlight the importance of simultaneous channel and contact interface engineering and establish the Al 2 O 3 interlayer as an effective approach for realising reliable p -type Te FETs.
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Research context
OpenAlex topics: 2D Materials and Applications · Phase-change materials and chalcogenides · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chungbuk National University
Chungbuk National University Hospital
Funding
Ministry of Education · the research year of Chungbuk National University in 2024 · Ministry of Science and ICT
References (48)
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