1T-TCAM with binary storage enabling ternary matching via bias-controlled wildcards using a feedback field-effect transistor
Source abstract
Abstract
Abstract In this study, we propose a reconfigurable one-transistor ternary content-addressable memory (1T-TCAM) cell based on a triple-gated feedback field-effect transistor with a nitride charge-trapping layer. The device employs binary data storage while enabling ternary matching through a bias-controlled wildcard operation. The energy band diagram, electrical characteristics, and TCAM operations, including cell-level functionality, sensing margin, search time, and 8-bit array performance, are systematically analyzed using a commercial TCAD simulator. The proposed 1T-TCAM supports three distinct search modes (Search ‘0’, Search ‘1’, and do not Care) by modulating the potential barrier in the p – i – n silicon channel via gate-voltage control while maintaining binary storage. It exhibits high complementary metal–oxide-semiconductor process compatibility and achieves a short search time below 2 ns with a high on-current of ∼10 µ A. This results in a sensing margin exceeding 10 10 , demonstrating superior integration density and high-speed search performance.
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Research context
OpenAlex topics: Network Packet Processing and Optimization · Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing
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References (35)
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