Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors
Source abstract
Abstract
Abstract This study investigates the response of nanowire field-effect transistors (NWFETs) to total ionizing dose (TID), single-event transient (SET), and their coupling effects in junctionless (JL), inversion (IM), and junctionless accumulation (AC) modes. The degradation of the three modes under irradiation and the effect of device bias configuration on the electrical properties of NWFETs are analyzed, and the different effects of SET on the three modes are compared. On this basis, the influence of TID on SET current generation and the charge collection mechanism are studied, and the changes in peak current, pulse width, and collected charge of transient current under different TIDs are compared. The results show that JL mode has the worst resistance to TID and SET coupling effects, followed by IM and AC modes.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Radiation Effects in Electronics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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