Evolution of Nanoscale Transistors

In the 21st century, due to technological advancements, complex tasks are being performed using different types of small devices. The dimensions of these devices have now reached the nanoscale regime, and scientists are exploring various materials and device structures to improve overall performance. In 1925, the first principle of transistors was introduced by Lilienfield, and later the first working transistor was developed at Bell Labs in 1947. Since then, the transistor structure has evolved many times, and new device structures have been proposed. From conventional planner metal-oxide-semiconductor field-effect transistor (MOSFET), scientists have introduced 3D fin field-effect transistor (FinFET) devices with superior performance, and various new 2D materials have also been introduced by researchers. In this chapter, the gradual development of modern-day field-effect transistor (FET) devices, from micron technology to nanotechnology, are going to be discussed. MOSFET devices to FinFET and tunnel field-effect transistor (TFET) devices and finally the FET structure with 2D materials are analyzed with their advantages and challenges, as reported by several researchers. Finally, a conclusion is drawn in the summary of the chapter, and some possible future research areas are also proposed for enthusiastic researchers.