Indium Arsenide (InAs) Nanowire Wrapped‐Insulator‐Gate Field‐Effect Transistor

Abstract In the highly competitive R&D‐field aimed at extensions or replacements of standard transistors and integrated circuits, two primary approaches are envisioned: either as modifications to today's technology (e.g. via development of high‐ k dielectrics), or as the development of more radically approaches on the device and integration level. One of these non‐disruptive technologies involves the use of vertical transistors in the form of monolithically grown, one‐dimensional III–V transistor channels, with a coaxial configuration of a metal‐insulator‐semiconductor field‐effect transistor (MISFET) implementation. This geometry and material choice promises a competitive new technology that may extend the scaling roadmap. The main benefits are the ideal terms of electrostatics, as well as down‐scaling offered in the coaxial configuration and the possibility of increasing the drive current and enhancing device performance with the addition of designed heterostructures as part of the transistor technology. In this chapter, the state‐of‐the‐art vertical wrap‐gate nanowire‐based transistor is described, and this family of transistors as wrapped‐insulator‐gate field‐effect transistors (abbreviated as WIGFET) is outlined.