article·2003-01-16

Electronic transport and noise in ballistic n n n semiconductor nanodiodes

Gabriel Gomila, Inma Rodríguez Cantalapiedra

Publisher page

Abstract

We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n+ – n– n+ semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov–Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current–voltage characteristics calculated from the present theory perfectly agree with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.