Extreme Ultraviolet Lithography

Abstract Extreme ultraviolet (EUV) lithography represents a photon‐based technology for the mass production of semiconductor devices with small feature sizes. It offers the capability of replacing the conventional lithography by defining structural features below 32 nm, and facilitating the further miniaturization of silicon‐based chip technology down to its physical limits. Although the basic physics of the optics is the same as for conventional lithography operating with UV light at a wavelength of 193 nm, the technological step into the EUV range requires changes of all components of the system. This chapter provides an overview of the system architecture of a EUV scanner and the components; that is, the light sources emitting at a wavelength of approximately 13.5 nm, debris mitigation, grazing incidence collectors, multilayer mirrors and the optical system, and also the photo resist. The underlying fundamentals and technological requirements, as well as the current status of development of the essential components, are addressed.