Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

A new approach for calculation of resonant state parameters is developed. The method proposed allows to solve different scattering prohlems such as scattering and capture probability as wvell as calculations of shifts and widths of energy levels. It has been applied to the problem of resonant states induced by inmpurities in the barrier of quantum wells and by strain in uniaxially stressed germanium.