In situassembled homojunctions in solution grown Pb_{1 x}Fe_xS nanoparticle films

Vacancy induced p–n homojunctions have been successfully grown in situ from an aqueous solution bath in Pb1−xFexS (x = 0.25 and 0.50) semiconductor nanoparticle films. An abrupt change of DC bias to the substrate during growth has been used as a technique to fabricate p–n junctions. (I–V) and (C–V) measurements confirm the formation of homojunctions in the nanoparticle thin films.