Direct growth of SnO₂nanowires on WO_xthin films

Single-crystalline SnO(2) nanowires were directly grown on an amorphous WO(x) thin film, leading to the formation of nano-scale contacts with a near-Ohmic conductance. The WO(x) facilitated the diffusion of SnO(2) on the surface of the WO(x) thin film, and SnO(2) nanowires could be uniformly grown from the diffused SnO(2). The contact properties between the metallic WO(x) and a semiconducting SnO(2) nanowire were examined. The resistivity of the WO(x)-SnO(2) nanowire contact was found to be approximately 2.6 × 10(-5) Ω cm(2). This was comparable to the resistivity of a contact between an Al electrode and a SnO(2) nanowire with a contact area. A fabricated SnO(2) nanowire transistor exhibited an on-current of approximately 386 nA, a threshold voltage of approximately 3.8 V, a subthreshold slope of approximately 0.26 V/dec and a field-effect mobility of approximately 43 cm(2) V(-1) s(-1).