journal article·2014-06-20

Localization and electron-electron interactions in few-layer epitaxial graphene

Shun-Tsung Lo, Fan-Hung Liu, Chang-Shun Hsu, Chiashain Chuang, Lung-I Huang, Yasuhiro Fukuyama, Yanfei Yang, Randolph E Elmquist, Chi-Te Liang

Nanotechnology· Volume 25· Issue 24
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Abstract

This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.
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Research context

OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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