Characterization of surface damage via contact probes
Source abstract
Abstract
The mechanical performance of brittle structural materials, such as engineering ceramics, decreases drastically in the presence of cracks which are inevitably introduced during material preparation via machining and polishing. For functional brittle materials (glasses and semiconductors) their optical and electronic properties may also be affected by the presence of such cracks; furthermore, 'chemical damage' in the form of surface contamination may arise after polishing. We present here two contrasting methods, both utilizing the mechanical probing of a surface, to evaluate such damage.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (55)
Show source-provided references
1. Stix G · Sci. Am. · 1995 · 9010.1038/scientificamerican0295-90 ↗
2. Keyes R W · Sci. Am. · 1993 · 7010.1038/scientificamerican0693-70 ↗
3. Hess K · 1992 · 44
4. Frank D J · 1992 · 553
5. Sekigawa T · Electron. Commun. Japan · 1993 · 76 · 3910.1002/ecjb.4420761005 ↗
6. Ono M · 1993 · 119
7. 10.1063/1.10299910.1063/1.102999 ↗
8. 10.1063/1.11321010.1063/1.113210 ↗
9. 10.1063/1.11410510.1063/1.114105 ↗
10. 10.1063/1.11172210.1063/1.111722 ↗
11. Shen T-C · Science · 1995 · 268 · 159010.1126/science.268.5217.1590 ↗
12. 10.1063/1.11381710.1063/1.113817 ↗
13. 10.1063/1.11513410.1063/1.115134 ↗
14. 10.1116/1.58761010.1116/1.587610 ↗
15. 10.1063/1.10396910.1063/1.103969 ↗
16. 10.1116/1.58535610.1116/1.585356 ↗
17. 10.1116/1.58698510.1116/1.586985 ↗
18. 10.1116/1.58745910.1116/1.587459 ↗
19. Tung R T · 1988 · 13
20. 10.1016/0039-6028(89)90006-X10.1016/0039-6028(89)90006-X ↗
21. Murarka S P · 1983 · 130
22. Reed M A · Sci. Am. · 1993 · 11810.1038/scientificamerican0193-118 ↗
23. Sakaki H · Surf. Sci. · 1992 · 26710.1016/0039-6028(92)91212-T ↗
24. Reed M · TI Tech. J. · 1989 · 29
25. Broekaert T P E · 1995 · 56
26. Lepselter M P · Proc. IEEE · 1968 · 56 · 108810.1109/PROC.1968.6618 ↗
27. Hattori R · Japan. J. Appl. Phys. · 1992 · 31 · L146710.1143/JJAP.31.L1467 ↗
28. 10.1063/1.11225010.1063/1.112250 ↗
29. 10.1109/55.32098510.1109/55.320985 ↗
30. 10.1063/1.11451310.1063/1.114513 ↗
31. Taur Y · IBM J. Res. Develop. · 1995 · 39 · 24510.1147/rd.391.0245 ↗
32. Tucker J R · 1994 · 322
33. Shimizu S · 1994 · 67
34. Snyder J P
35. Wang C · 1996
36. Bean J C · 1988 · 65
37. 10.1063/1.35576310.1063/1.355763 ↗
38. 10.1063/1.10272810.1063/1.102728 ↗
39. Meyerson B S · Sci. Am. · 1994 · 6210.1038/scientificamerican0394-62 ↗
40. 10.1063/1.9541010.1063/1.95410 ↗
41. 10.1116/1.57816110.1116/1.578161 ↗
42. Suemasu T · IEICE Trans. Electron. · 1994 · E77 · 1450
43. Averin D V · J. Low Temp. Phys. · 1986 · 62 · 34510.1007/BF00683469 ↗
44. Averin D V · 1991 · 173
45. 10.1016/0921-4526(88)90086-510.1016/0921-4526(88)90086-5 ↗
46. 10.1063/1.34254610.1063/1.342546 ↗
47. Devoret M H · Nature · 1992 · 360 · 54710.1038/360547a0 ↗
48. Devoret M H · 1992
49. 10.1103/PhysRevLett.64.269110.1103/PhysRevLett.64.2691 ↗
50. Matsumoto K · 1995 · 46
51. 10.1063/1.35220610.1063/1.352206 ↗
52. 10.1016/0167-9317(94)00055-Y10.1016/0167-9317(94)00055-Y ↗
53. Nakagawa K · Mater. Res. Soc. Symp. Proc. · 1991 · 220 · 49710.1557/PROC-220-497 ↗
54. 10.1063/1.10884810.1063/1.108848 ↗
55. 10.1063/1.35637510.1063/1.356375 ↗