journal article·2019-01-25

Understanding the Magnetic Memory Effect in Fe-Doped NiO Nanoparticles for the Development of Spintronic Devices

Ashish Chhaganlal Gandhi, R. Pradeep, Yu-Chen Yeh, Tai-Yue Li, Chi-Yuan Wang, Y. Hayakawa, Sheng Yun Wu

ACS Applied Nano Materials· Volume 2· Issue 1
Publisher page

Abstract

Uniform hexagonal single phase Ni1–xFexO (x = 0, 0.01, 0.05, and 0.1) nanoparticles synthesized by a standard hydrothermal method are characterized with an enhanced lattice expansion along with a decrease in the microstrain, crystal size, and Ni occupancy as a function of the Fe concentration. The observed anomalous temperature and field dependent magnetic properties as a function of the Fe content were explained using a core–shell type structure of Ni1–xFexO nanoparticle such that the effect of Fe-doping has led to a decrease of disordered surface spins and an increase of uncompensated-core spins. Perfect incorporation of Fe3+ ions at the octahedral site of NiO was observed from the low Fe concentration; however, at a higher Fe content, 4:1 defect clusters (four octahedral Ni2+ vacancies surrounding an Fe3+ tetrahedral interstitial) are formed in the core of the nanoparticles, resulting in the transition of spin-glassy to the cluster-glassy system. An enhanced thermal magnetic memory effect is noted from the cluster-glassy system possibly because of increased intraparticle interactions. The outcome of this study is important for the future development of diluted magnetic semiconductor spintronic devices and the understanding of their fundamental physics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Transition Metal Oxide Nanomaterials · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

Funding

Ministry of Science and Technology, Taiwan

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