journal article·2013-02

Structural and charge transport characteristics of graphene layers obtained from CVD thin film and bulk graphite materials

Anastasia V. Tyurnina, Kazuhito Tsukagoshi, Hidefumi Hiura, Alexander N. Obraztsov

Carbon· Volume 52
Publisher page

Abstract

We report an experimental comparative study of graphene layers produced by micromechanical cleavage of bulk graphite materials of different origins and graphite films obtained by plasma enhanced chemical vapor deposition (PECVD). Structural characteristics of these materials were evaluated using Raman spectroscopy and electron microscopy. Field effect transistors (FETs) based on the PECVD graphene were produced using electron beam lithography. Conductivity, carrier mobility and other characteristics of the PECVD graphene obtained from Raman and FET tests were similar to the properties of graphene flakes obtained from bulk graphite materials. Taking into account the scalability of the CVD fabrication, these results confirm the possible industrial use of graphene films obtained by this method.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Graphene research and applications · Carbon Nanotubes in Composites · Advancements in Battery Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (34)

Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. Chemical vapour deposition: making graphene on a large scale10.1038/nnano.2009.67 ↗
3. Fine structure constant defines visual transparency of graphene10.1126/science.1156965 ↗
4. Transparent, conductive graphene electrodes for dye-sensitized solar cells10.1021/nl072838r ↗
5. Graphene-based optically transparent electrodes for spectroelectrochemistry in the UV–vis region10.1002/smll.200901448 ↗
6. The electronic properties of graphene10.1103/RevModPhys.81.109 ↗
7. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene10.1038/nphys245 ↗
8. Controlling the electronic structure of bilayer graphene10.1126/science.1130681 ↗
9. Two-dimensional gas of massless Dirac fermions in graphene10.1038/nature04233 ↗
10. Experimental observation of the quantum Hall effect and Berry’s phase in graphene10.1038/nature04235 ↗
11. Roll-to-roll production of 30-inch graphene films for transparent electrodes10.1038/nnano.2010.132 ↗
12. How perfect can graphene be?10.1103/PhysRevLett.103.136403 ↗
13. A graphene field-effect device10.1109/LED.2007.891668 ↗
14. Geim, A. Graphene update. Portland, Oregon, Bull APS55(2), 2010.
15. Heteroepitaxial graphite on 6H–SiC(0001): interface formation through conduction-band electronic structure10.1103/PhysRevB.58.16396 ↗
16. Atomic structure of monolayer graphite formed on Ni(111)10.1016/S0039-6028(96)00785-6 ↗
17. Chemical vapor deposition of thin graphite films of nanometer thickness10.1016/j.carbon.2007.05.028 ↗
18. Raman scattering characterization of CVD graphite films10.1016/j.carbon.2008.03.002 ↗
19. Topology peculiarities of graphite films of nanometer thickness10.1002/pssb.201000456 ↗
20. Making graphene visible10.1063/1.2768624 ↗
21. Rayleigh imaging of graphene and graphene layers10.1021/nl071168m ↗
22. Inter-layer screening length to electric field in thin graphite film10.1143/APEX.1.034007 ↗
23. Raman spectrum of graphene and graphene layers10.1103/PhysRevLett.97.187401 ↗
24. Raman fingerprint of charged impurities in graphene10.1063/1.2818692 ↗
25. Synthesis of high-quality monolayer and bilayer graphene on copper using CVD10.1016/j.carbon.2011.05.047 ↗
26. A review of chemical vapour deposition of graphene on copper10.1039/C0JM02126A ↗
27. Graphene transistors10.1038/nnano.2010.89 ↗
28. Electronic properties of graphene10.1002/pssb.200776208 ↗
29. Large-area synthesis of high-quality and uniform graphene films on Cu foils10.1126/science.1171245 ↗
30. Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition
31. Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors10.1063/1.1812368 ↗
32. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature10.1021/nl9039636 ↗
33. Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors10.1088/0957-4484/22/26/265201 ↗
34. Low-temperature synthesis of large-area graphene-based transparent conductive films using surface wave plasma chemical vapor deposition10.1063/1.3605560 ↗