Ferroelectric field-effect transistors based on HfO 2 : a review
Source abstract
Abstract
Abstract In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO 2 ), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed. We also briefly survey recent developments in alternative applications for FeFETs including neuromorphic and in-memory computing as well as radiofrequency devices.
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
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