journal article·2025Open access

Modulation of photoluminescence in a MoS 2 device through tuning the quantum tunneling effect

Bor-Wei Liang, Ruei-Yu Hsu, Wen-Hao Chang, Ye-Ru Chen, You-Jia Huang, Tilo H. Yang, Yu Liang Li, Chin-Yuan Su, Ting-Hua Lu, Yann-Wen Lan

Nanoscale Horizons· Volume 10· Issue 11

Abstract

FETs exhibit considerably enhanced PL spectral modulation under applied gate bias, underscoring the critical role of tunneling currents in governing optical responses. This work advances the understanding of 2D material-based optoelectronics and highlights their potential for next-generation photodetector applications.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Neural Networks and Reservoir Computing · 2D Materials and Applications · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan

Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

Graduate Institute of Energy Engineering, National Central University, Taoyuan, Taiwan

Funding

National Science and Technology Council

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