DataVXNanoscalePaper
journal article·2022Open access

Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Dmitry Dzhigaev, Johannes Svensson, Abinaya Krishnaraja, Zhongyunshen Zhu, Zhe Ren, Yi Liu, Sebastian Kalbfleisch, Alexander Björling, Filip Lenrick, Zoltan Imre Balogh, Susanna Hammarberg, Jesper Wallentin, Rainer Timm, Lars-Erik Wernersson, Anders Mikkelsen

Nanoscale· Volume 14· Issue 13
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Source abstract

Abstract

Correction for ‘Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction’ by Dmitry Dzhigaev et al. , Nanoscale , 2020, 12 , 14487–14493, DOI: 10.1039/D0NR02260H.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

NanomaterialsElectronic materials

OpenAlex topics: Diamond and Carbon-based Materials Research · Ion-surface interactions and analysis · Advanced ceramic materials synthesis

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Affiliations

Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

MAX IV Laboratory, Lund University, 22100 Lund, Sweden

DTU CEN, DTU, Fysikvej 2800, Lyngby, Denmark

Funding

Vetenskapsrådet · Stiftelsen för Strategisk Forskning · VINNOVA · Svenska Forskningsrådet Formas

References

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