journal article·2023

Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules

Sybren Santermans, Geert Hellings, Marc Heyns, Willem Van Roy, Koen Martens

Nanoscale· Volume 15· Issue 5
Publisher page

Abstract

Electrolyte-gated silicon field-effect transistors (FETs) capable of detecting single molecules could enable high-throughput molecular sensing chips to advance, for example, genomics or proteomics. For solid-gated silicon FETs it is well-known that nano-scaled devices become sensitive to single elementary charges near the silicon-oxide interface. However, in electrolyte-gated FETs, electrolyte screening strongly reduces sensitivity to charges near the gate oxide. The question arises whether nano-scaling electrolyte-gated FETs can entail a sufficiently large signal-to-noise ratio (SNR) for the detection of single molecules. We enhanced a technology computer-aided design tool with electrolyte screening models to calculate the impact of the FET geometry on the single-molecule signal and FET noise. Our continuum FET model shows that a sufficiently large single-molecule SNR is only obtained when nano-scaling all FET channel dimensions. Moreover, we show that the expected scaling trend of the single-molecule SNR breaks down and no longer results in improvements for geometries approaching the decananometer size. This is the characteristic size of the FET channel region modulated by a typical molecule. For gate lengths below 50 nm, the overlap of the modulated region with the highly conductive junctions leads to saturation of the SNR. For cross-sections below 10-30 nm, SNR degrades due to the overlap of the modulated region with the convex FET corners where a larger local gate capacitance reduces charge sensitivity. In our study, assuming a commercial solid-state FET noise amplitude, we find that a suspended nanowire FET architecture with 35 nm length and 5 × 10 nm2 cross-section results in the highest SNR of about 10 for a 15-base DNA oligo in a 15 mM electrolyte. In contrast with typical silicon nanowire FET sensors which possess micron-scale gate lengths, we find it to be key that all channel dimensions are scaled down to the decananometer range.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Analytical Chemistry and Sensors · Nanowire Synthesis and Applications · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

imec, Kapeldreef 75, 3001 Leuven, Belgium

Department of Materials Engineering, University of Leuven, Kasteelpark Arenberg 44, 3001 Leuven, Belgium

References (70)

Show source-provided references
1. Bergveld · IEEE Trans. Biomed. Eng. · 1970 · BME-17 · 7010.1109/TBME.1970.4502688 ↗
2. Cui · Science · 2001 · 293 · 128910.1126/science.1062711 ↗
3. Patolsky · Nanomedicine · 2006 · 1 · 5110.2217/17435889.1.1.51 ↗
4. Hahm · Nano Lett. · 2004 · 4 · 5110.1021/nl034853b ↗
5. Patolsky · Proc. Natl. Acad. Sci. U. S. A. · 2004 · 101 · 1401710.1073/pnas.0406159101 ↗
6. Patolsky · Nat. Protoc. · 2006 · 1 · 171110.1038/nprot.2006.227 ↗
7. Stern · Nature · 2007 · 445 · 51910.1038/nature05498 ↗
8. Franco · IEEE Int. Reliab. Phys. Symp. Proc. · 201210.1109/IRPS.2012.6241841 ↗
9. Kaczer · Solid-State Electron. · 2016 · 125 · 5210.1016/j.sse.2016.07.010 ↗
10. M.von Haartman and M.Östling , in Low-Frequency Noise In Advanced Mos Devices , Springer , Netherlands , 2007 , pp. 1–2610.1007/978-1-4020-5910-0 ↗
11. Rajan · IEEE Electron Device Lett. · 2010 · 31 · 61510.1109/LED.2010.2047000 ↗
12. Clément · Appl. Phys. Lett. · 2011 · 98 · 01410410.1063/1.3535958 ↗
13. Männik · Nano Lett. · 2008 · 8 · 68510.1021/nl073271h ↗
14. Stern · Nano Lett. · 2007 · 7 · 340510.1021/nl071792z ↗
15. Rosenstein · Wiley Interdiscip. Rev.: Nanomed. Nanobiotechnol. · 2015 · 7 · 475
16. Gooding · Angew. Chem., Int. Ed. · 2016 · 55 · 1135410.1002/anie.201600495 ↗
17. Ardui · Nucleic Acids Res. · 2018 · 46 · 215910.1093/nar/gky066 ↗
18. Rodriques · PLoS One · 2019 · 14 · e021286810.1371/journal.pone.0212868 ↗
19. Miclotte · PLoS One · 2020 · 15 · e023862510.1371/journal.pone.0238625 ↗
20. Zhirnov · Nat. Mater. · 2016 · 15 · 36610.1038/nmat4594 ↗
21. Shoorideh · Proc. Natl. Acad. Sci. U. S. A. · 2014 · 111 · 511110.1073/pnas.1315485111 ↗
22. Choi · Science · 2012 · 335 · 31910.1126/science.1214824 ↗
23. Choi · J. Am. Chem. Soc. · 2012 · 134 · 203210.1021/ja211540z ↗
24. Choi · Phys. Chem. Chem. Phys. · 2013 · 15 · 1487910.1039/c3cp51356d ↗
25. Choi · Nano Lett. · 2013 · 13 · 62510.1021/nl304209p ↗
26. Olsen · J. Am. Chem. Soc. · 2013 · 135 · 785510.1021/ja311603r ↗
27. Sims · J. Am. Chem. Soc. · 2013 · 135 · 786110.1021/ja311604j ↗
28. Sorgenfrei · Nano Lett. · 2011 · 11 · 373910.1021/nl201781q ↗
29. Sorgenfrei · Nat. Nanotechnol. · 2011 · 6 · 12610.1038/nnano.2010.275 ↗
30. Setiadi · Nanoscale · 2017 · 9 · 1067410.1039/C7NR02534C ↗
31. Liu · Appl. Phys. Lett. · 2005 · 86 · 1
32. Wang · Nano Lett. · 2007 · 7 · 91010.1021/nl062742h ↗
33. Wang · Angew. Chem., Int. Ed. · 2014 · 53 · 503810.1002/anie.201309438 ↗
34. He · Angew. Chem., Int. Ed. · 2016 · 55 · 903610.1002/anie.201603038 ↗
35. Li · Nanoscale · 2016 · 8 · 1617210.1039/C6NR04103E ↗
36. Li · ACS Nano · 2017 · 11 · 1278910.1021/acsnano.7b07639 ↗
37. Liu · Adv. Sci. · 2021 · 210138310.1002/advs.202101383 ↗
38. Chung · Nanotechnology · 2012 · 23 · 06520210.1088/0957-4484/23/6/065202 ↗
39. Pittino · Solid-State Electron. · 2014 · 98 · 6310.1016/j.sse.2014.04.011 ↗
40. Gupta · IEEE Sens. J. · 2020 · 20 · 895610.1109/JSEN.2020.2987627 ↗
41. Bikerman · London, Edinburgh Dublin Philos. Mag. J. Sci. · 1942 · 33 · 38410.1080/14786444208520813 ↗
42. Bazant · Adv. Colloid Interface Sci. · 2009 · 152 · 4810.1016/j.cis.2009.10.001 ↗
43. Santermans · ACS Sens. · 2021 · 6 · 104910.1021/acssensors.0c02285 ↗
44. GTS – Advanced TCAD and Physical Device Simulation – Global TCAD Solutions, https://www.globaltcad.com/en/home.html
45. Asenov · IEEE Trans. Electron Devices · 2003 · 50 · 83910.1109/TED.2003.811418 ↗
46. M. F.Bukhori , A. R.Brown , S.Roy and A.Asenov
47. M. F.Bukhori , T.Grasser , B.Kaczer , H.Reisinger and A.Asenov
48. Gerrer · Microelectron. Reliab. · 2014 · 54 · 68210.1016/j.microrel.2014.01.024 ↗
49. Landheer · J. Appl. Phys. · 2005 · 98 · 04470110.1063/1.2008354 ↗
50. Gupta · IEEE Sens. J. · 2021 · 21 · 414310.1109/JSEN.2020.3031469 ↗
51. Gao · Nano Lett. · 2010 · 10 · 54710.1021/nl9034219 ↗
52. Heller · Nano Lett. · 2009 · 9 · 37710.1021/nl8031636 ↗
53. J. N.Israelachvili , Intermolecular and Surface Forces , Elsevier , 2011
54. Banaszeski Da Silva · IEEE Trans. Electron Devices · 2016 · 63 · 368310.1109/TED.2016.2593916 ↗
55. Reimbold · IEEE Trans. Electron Devices · 1984 · 31 · 119010.1109/T-ED.1984.21687 ↗
56. Gupta · IEEE Sens. J. · 2020 · 1
57. C. G.Jakobson , M.Feinsod and Y.Nemirovsky , Low frequency noise and drift in Ion Sensitive Field Effect Transistors , 2000 , vol. 68
58. Bedner · Sens. Actuators, B · 2014 · 191 · 27010.1016/j.snb.2013.09.112 ↗
59. Hung · IEEE Trans. Electron Devices · 1990 · 37 · 65410.1109/16.47770 ↗
60. Scholten · IEEE Trans. Electron Devices · 2003 · 50 · 61810.1109/TED.2003.810480 ↗
61. K.Martens , S.Santermans , M.Gupta , G.Hellings , R.Wuytens , B.Du Bois , E.Dupuy , E.Altamirano-Sanchez , K.Jans , R.Vos , T.Stakenborg , L.Lagae , M.Heyns , S.Severi and W.Van Roy
62. Tintelott · Sensors · 2021 · 21 · 515310.3390/s21155153 ↗
63. Dorvel · Anal. Chem. · 2013 · 85 · 949310.1021/ac400955f ↗
64. Korlach · Proc. Natl. Acad. Sci. U. S. A. · 2008 · 105 · 117610.1073/pnas.0710982105 ↗
65. Pibiri · Nano Lett. · 2014 · 14 · 349910.1021/nl501064b ↗
66. Plénat · ACS Appl. Mater. Interfaces · 2017 · 9 · 3056110.1021/acsami.7b11953 ↗
67. Selberherr · Solid-State Electron. · 1990 · 33 · 142510.1016/0038-1101(90)90117-W ↗
68. A.Wettstein , Quantum Effects in MOS Devices , Zürich , 2000
69. C. G.Malmberg and A. A.Maryott , Dielectric Constant of Water from 0° to 100 °C , 1956 , vol. 56
70. Enz · Analog Integr. Circuits Signal Process. · 1995 · 8 · 8310.1007/BF01239381 ↗