Influence of the TiN diffusion barrier on the leakage current and ferroelectricity in an Al-doped HfO _x ferroelectric memristor and its application to neuromorphic computing

Si can also exhibit multi-level characteristics and achieve a 10% read margin in 320 × 320 arrays. Ferroelectrics can also be applied to neuromorphic computing by imitating synaptic properties such as potentiation, depression, paired-pulse facilitation, and excitatory postsynaptic current. Using short-term plasticity, successful implementation in reservoir computing is also realized, achieving 95% classification accuracy. This paper shows promise for the use of memristors in artificial neural networks.