Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates

Abstract

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Luminescent Materials and Devices

South China University of Technology

Guangzhou 510640

China

School of Chemistry and Chemical Engineering

Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province

Center for Integrated Research of Future Electronics

and Institute of Materials and Systems for Sustainability

Nagoya University

Nagoya 464-8601

Japan

Harbin Institute of Technology

Harbin 150001

Funding

National Basic Research Program of China · National Outstanding Youth Science Fund Project of National Natural Science Foundation of China · National Natural Science Foundation of China · China Postdoctoral Science Foundation

References (65)