journal article·2020

Ge x Si 1−x virtual-layer enhanced ferromagnetism in self-assembled Mn 0.06 Ge 0.94 quantum dots grown on Si wafers by molecular beam epitaxy

Liming Wang, Yichi Zhang, Tao Liu, Zhi Zhang, Huiyong Hu, Jin Zou, Quanjie Jia, Zuimin Jiang

Nanoscale· Volume 12· Issue 6
Publisher page

Abstract

VS, the ferromagnetism of QDs grown on VS will markedly increase due to the improvements of hole concentration and Ge composition inside the QDs. These results are fundamentally important in the understanding and especially in the realization of high Curie temperature MnGe diluted magnetic semiconductors.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology

School of Microelectronics

Xidian University

Xi'an 710071

China

State Key Laboratory of Surface Physics

Department of Physics

and Collaborative Innovation Center of Advanced Microstructures

Fudan University

Shanghai 200433

Materials Engineering and Centre for Microscopy and Microanalysis

The University of Queensland

QLD 4072

Australia

Beijing Synchrotron Radiation Facility

Institute of High Energy Physics

Beijing 100039

Funding

Fundamental Research Funds for the Central Universities

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