journal article·2018

The formation of a functional pentacene/CH 3 NH 3 PbI 3−x Cl x perovskite interface: optical gating and field-induced charge retention

Youngjun Kim, Juyun Kim, Hyungduk Ko, Byoungnam Park

Nanoscale· Volume 10· Issue 41
Publisher page

Abstract

We fabricated a functional pentacene/CH3NH3PbI3-xClx perovskite interface where optical gating and field assisted charge retention occur. Using a pentacene/perovskite field effect transistor (FET) test platform, we investigated the interfacial charge transfer associated with optical gating through threshold voltage measurements under illumination. Importantly, bistable electrical conduction in pentacene/perovskite FET devices was achieved as a result of field-induced charge retention at the interface and the origin is discussed to be associated with interfacial charging at the pentacene/perovskite interface. Interfacial contact modification associated with ion migration and other possible effects in the perovskite layer plays a crucial role in forming a functional interface involving organic semiconducting materials.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Hongik University 72-1

Seoul 04066

Korea

Nanophotonics Research Center Korea Institute of Science and Technology Hwarangno 14-gil 5

Seoul 136-791

Funding

Ministry of Science, ICT and Future Planning · Ministry of Education · Korea Institute of Science and Technology

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