journal article·2020

Largely enhanced thermoelectric effect and pure spin current in silicene-based devices under hydrogen modification

Q. Qiao, F. X. Tan, L. Y. Yang, X. F. Yang, Y. S. Liu

Nanoscale· Volume 12· Issue 1
Publisher page

Abstract

Based on the density functional theory and nonequilibrium Green's function methods, we launch a systematic study of the magnetic properties and thermoelectric effects in silicene-based devices constructed by using zigzag silicene nanoribbons (ZSiNRs). By modulating the adsorption site, it is found that the ground state of ZSiNRs varies from an antiferromagnetic state to a ferromagnetic state. Meanwhile, a spin-degenerate semiconductor evolves into a spin semiconductor. The spin and charge thermoelectric figure of merits have an almost equal value of about 60 in the narrow device, which originates from the spin-dependent conductance dips and high spin-filtering effects. Moreover, a thermally-driven pure spin current in the silicene-based devices is obtained in the absence of the gate voltage, and its magnitude is effectively enhanced as the device width increases. Our results suggest that the silicene-based devices have very good prospects for spin caloritronics.
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Research context

OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Electronic Engineering

Changshu Institute of Technology

Changshu 215500

China

School of Materials Science and Engineering

School of Mechanical Engineering

Funding

National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · Qinglan Project of Jiangsu Province of China

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