journal article·2026

An ultrafast self-powered semi-transparent pyro-phototronic device array based on room-temperature amorphous In 2 S 3 /NiO heterostructures

Malkeshkumar Patel, Shubham Umeshkumar Gupta, Vivek Mohan More, Sourov Hussain, Seojun Jeon, Kyu-Won Kim, Joondong Kim

Nanoscale· Volume 18· Issue 16
Publisher page

Abstract

We report a room-temperature-fabricated, self-powered, semi-transparent pyro-phototronic device array based on amorphous In2S3/NiO heterostructures. The amorphous In2S3 layer, confirmed by XRD, enables a transparent device with ∼36% visible transmittance, suitable for wearable and transparent electronics. Leveraging the pyroelectric effect at the In2S3/NiO interface and a transparent AgNW/ZnO electrode, the device exhibits ultrafast (<20 μs) photoresponse and responsivity up to 0.2 A W-1 under 420 nm illumination without external bias. The AgNW/ZnO electrode enhances photocurrent stability and reproducibility. These results demonstrate a low-temperature, versatile heterostructure platform for next-generation transparent, self-powered optoelectronic and wearable photo-communication devices.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Chalcogenide Semiconductor Thin Films · TiO2 Photocatalysis and Solar Cells

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd Yeonsu, Incheon, 22012, Korea (Rep. of)

Department of Electrical Engineering, Incheon National University, 119 Academy Rd Yeonsu, Incheon, 22012, Korea (Rep. of)

Department of Chemistry, Incheon National University, 119 Academy Rd Yeonsu, Incheon, 22012, Korea (Rep. of)

Funding

Ministry of Science and ICT, South Korea · National Research Foundation of Korea

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