Solution-processed negative gauge factor PtSe 2 strain sensors
Source abstract
Abstract
We undertake electrochemical exfoliation of a 2D semiconductor platinum diselenide, PtSe2 and investigate the piezoresistance response of a solution-processed network. Due to the large PtSe2 aspect ratios, exceeding 300, we achieve conformal flake-to-flake junctions and good inter-flake electrical coupling. Our measured piezoresistive gauge factor is negative (-5.45), consistent with the intrinsic negative gauge factor of PtSe2. This negative network gauge factor implies that strain is transferred from the substrate to the nanosheets. However, detailed modelling shows that the strain transferred to the nanosheets is much smaller than the applied strain, showing that conformal junctions do not necessarily lead to good mechanical coupling between nanosheets. Our model implies that this gauge factor is consistent with a strain transfer efficiency of 8.5%. Our strain sensor also demonstrated a cyclic response for over 1000 cycles, enabling the sensor to be used in future flexible optoelectronics applications.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Chemistry, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland
Instituto de Ciencia y Tecnología del Carbono INCAR-CSIC, C/Francisco Pintado Fe 26, Oviedo 33011, Spain
Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
Funding
H2020 Marie Skłodowska-Curie Actions · Irish Research Council · H2020 European Research Council · Ministerstvo Školství, Mládeže a Tělovýchovy · European Regional Development Fund
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