Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction
Source abstract
Abstract
Quantum well states (QWSs) with sizable Rashba splitting are a promising quantum phase to achieve spin-split current for quantum computing and spintronics due to their controllable band structures. However, most QWSs were achieved upon metallic substrates with strong bulk electron transport. Developing semiconductor-based QWSs is preferable to minimize substrate interference. Here we report a Pb induced surface reconstruction on Bi/Si(111) α phase. Combining scanning tunneling microscopy (STM) and density functional theory (DFT) the atomic structure has been determined. QWSs and a sizable Rashba band splitting are predicted, with the latter comparable to what is found in other semiconductor heterostructures and an order of magnitude higher than that in Pb/Si(111) QWSs.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Surface and Thin Film Phenomena · Quantum and electron transport phenomena · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada
Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario M5S 3G8, Canada
Funding
Natural Sciences and Engineering Research Council of Canada · University of Toronto · Government of Ontario · FedDev Ontario
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