Permanent photodoping of plasmonic gallium-ZnO nanocrystals
Source abstract
Abstract
Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Research Laboratory of Functional Materials Technologies
Faculty of Materials Science and Applied Chemistry
Riga Technical University
LV-1048 Riga
Latvia
Institute of Materials
École polytechnique fédérale de Lausanne
CH-1015 Lausanne
Switzerland
Institute of Solid State Physics
University of Latvia
Riga
Rudolfs Cimdins Riga Biomaterials Innovations and Development Centre of RTU
Institute of General Chemical Engineering
Faculty of Materials Science
Institute of Food Safety
Animal Health and Environment “BIOR”
Funding
Latvijas Zinātnes Padome
References (26)
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