journal article·2019

Precision-extension technique for accurate vector–matrix multiplication with a CNT transistor crossbar array

Sungho Kim, Yongwoo Lee, Hee-Dong Kim, Sung-Jin Choi

Nanoscale· Volume 11· Issue 44
Publisher page

Abstract

Most machine learning algorithms involve many multiply-accumulate operations, which dictate the computation time and energy required. Vector-matrix multiplications can be accelerated using resistive networks, which can be naturally implemented in a crossbar geometry by leveraging Kirchhoff's current law in a single readout step. However, practical computing tasks that require high precision are still very challenging to implement in a resistive crossbar array owing to intrinsic device variability and unavoidable crosstalk, such as sneak path currents through adjacent devices, which inherently result in low precision. Here, we experimentally demonstrate a precision-extension technique for a carbon nanotube (CNT) transistor crossbar array. High precision is attained through multiple devices operating together, each of which stores a portion of the required bit width. A 10 × 10 CNT transistor array can perform vector-matrix multiplication with high accuracy, making in-memory computing approaches attractive for high-performance computing environments.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Analog and Mixed-Signal Circuit Design · Quantum-Dot Cellular Automata

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering

Sejong University

Seoul 05006

Korea

School of Electrical Engineering

Kookmin University

Seoul 02707

Funding

Ministry of Science, ICT and Future Planning · Ministry of Trade, Industry and Energy

References (42)

Show source-provided references
1. LeCun · Nature · 2015 · 521 · 43610.1038/nature14539 ↗
2. Williams · Comput. Sci. Eng. · 2017 · 19 · 710.1109/MCSE.2017.31 ↗
3. G. H. Golub and C. F.Van Loan , Matrix computations , Johns Hopkins Univ Press , 201310.56021/9781421407944 ↗
4. Sheridan · Nat. Nanotechnol. · 2017 · 12 · 78410.1038/nnano.2017.83 ↗
5. Jeong · Nano Lett. · 2018 · 18 · 444710.1021/acs.nanolett.8b01526 ↗
6. A. Shafiee , A.Nag , N.Muralimanohar , R.Balasubramonian , J. P.Strachan , M.Hu , R. S.Williams and V.Srikumar , in 2016 ACM/IEEE 43rd Annual International Symposium on Computer Architecture (ISCA) , IEEE , 2016 , pp. 14–26
7. M. Hu , R. S.Williams , J. P.Strachan , Z.Li , E. M.Grafals , N.Davila , C.Graves , S.Lam , N.Ge and J. J.Yang , in Proceedings of the 53rd Annual Design Automation Conference on - DAC ‘16 , ACM Press , New York, New York, USA , 2016 , pp. 1–6
8. Jeong · IEEE Trans. Nanotechnol. · 2018 · 17 · 18410.1109/TNANO.2017.2784364 ↗
9. X. Guo , F. M.Bayat , M.Prezioso , Y.Chen , B.Nguyen , N.Do and D. B.Strukov , in 2017 IEEE Custom Integrated Circuits Conference (CICC) , IEEE , 2017 , pp. 1–4
10. Zidan · Nat. Electron. · 2018 · 1 · 41110.1038/s41928-018-0100-6 ↗
11. Liebmann · J. Appl. Phys. · 1950 · 1 · 92
12. Strukov · Nanotechnology · 2005 · 16 · 88810.1088/0957-4484/16/6/045 ↗
13. Hasler · Front. Neurosci. · 2013 · 7 · 11810.3389/fnins.2013.00118 ↗
14. Hu · Adv. Mater. · 2018 · 30 · 170591410.1002/adma.201705914 ↗
15. M. Hu , J. P.Strachan , Z.Li and R. S.Williams , in 2016 17th International Symposium on Quality Electronic Design (ISQED) , IEEE , 2016 , pp. 374–379
16. Kuzum · Nanotechnology · 2013 · 24 · 38200110.1088/0957-4484/24/38/382001 ↗
17. P. Gu , B.Li , T.Tang , S.Yu , YuCao , Y.Wang and H.Yang , in The 20th Asia and South Pacific Design Automation Conference , IEEE , 2015 , pp. 106–111
18. M. Hu , H.Li , Q.Wu and G. S.Rose , in Proceedings of the 49th Annual Design Automation Conference on - DAC ‘12 , ACM Press , New York, New York, USA , 2012 , p. 49810.1145/2228360.2228448 ↗
19. Strukov · Appl. Phys. A · 2009 · 94 · 51510.1007/s00339-008-4975-3 ↗
20. Wang · Nat. Mater. · 2017 · 16 · 10110.1038/nmat4756 ↗
21. Kim · ACS Nano · 2014 · 8 · 236910.1021/nn405827t ↗
22. Li · Nat. Commun. · 2018 · 9 · 238510.1038/s41467-018-04484-2 ↗
23. Li · Nat. Electron. · 2018 · 1 · 5210.1038/s41928-017-0002-z ↗
24. Kim · ACS Appl. Mater. Interfaces · 2015 · 7 · 2547910.1021/acsami.5b08541 ↗
25. Kim · ACS Nano · 2017 · 11 · 281410.1021/acsnano.6b07894 ↗
26. Duong · J. Mater. Chem. · 2012 · 22 · 199410.1039/C1JM15154A ↗
27. Alibart · Nanotechnology · 2012 · 23 · 7520110.1088/0957-4484/23/7/075201 ↗
28. L. Gao , F.Alibart and D. B.Strukov , in 2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC) , IEEE , 2012 , pp. 88–93
29. Gao · IEEE Electron Device Lett. · 2015 · 36 · 115710.1109/LED.2015.2481819 ↗
30. S. Park , A.Sheri , J.Kim , J.Noh , J.Jang , M.Jeon , B. H. R.Lee , B. H. R.Lee , B. H. R.Lee and H.Hwang , in Technical Digest - International Electron Devices Meeting, IEDM , IEEE , 2013 , pp. 25.6.1–25.6.4
31. G. W. Burr , R. M.Shelby , C.di Nolfo , J. W.Jang , R. S.Shenoy , P.Narayanan , K.Virwani , E. U.Giacometti , B.Kurdi and H.Hwang , in 2014 IEEE International Electron Devices Meeting , IEEE , 2014 , pp. 29.5.1–29.5.4
32. P. Y. Chen , B.Lin , I. T.Wang , T. H.Hou , J.Ye , S.Vrudhula , J. S.Seo , Y.Cao and S.Yu , in 2015 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2015 , IEEE , 2016 , pp. 194–199
33. S. Yu , P.-Y. Y.Chen , Y.Cao , L.Xia , Y.Wang and H.Wu , in Technical Digest - International Electron Devices Meeting, IEDM , IEEE , 2015 , pp. 17.3.1–17.3.4
34. Fuller · Science · 2019 · 364 · 57010.1126/science.aaw5581 ↗
35. Yao · Nat. Commun. · 2017 · 8 · 1519910.1038/ncomms15199 ↗
36. Jeong · Adv. Electron. Mater. · 2016 · 2 · 160009010.1002/aelm.201600090 ↗
37. Li · Nat. Commun. · 2018 · 9 · 238510.1038/s41467-018-04484-2 ↗
38. Cai · Nat. Electron. · 2019 · 2 · 29010.1038/s41928-019-0270-x ↗
39. Wang · Nat. Electron. · 2019 · 2 · 11510.1038/s41928-019-0221-6 ↗
40. Hsieh · IEEE Electron Device Lett. · 2017 · 38 · 87110.1109/LED.2017.2710955 ↗
41. Chen · Nanoscale · 2018 · 10 · 1560810.1039/C8NR04766A ↗
42. Sun · Nat. Commun. · 2019 · 10 · 316110.1038/s41467-019-11187-9 ↗