Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics
Source abstract
Abstract
/V·s in heavily doped layers, with further reductions at elevated temperatures due to thermally activated scattering and carrier redistribution. These results demonstrate that Raman spectroscopy is a powerful nondestructive tool to simultaneously assess electronic transport properties and crystalline disorder in vertical GaN-based power electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l’Université, Sherbrooke, Québec J1K0A5, Canada
Laboratoire Nanotechnologies Nanosystèmes (LN2)-IRL3463, CNRS
Université de Sherbrooke, INSA Lyon, Université Grenoble Alpes, École Centrale de Lyon
Laboratoire Ampère, UMR CNRS 5005
Université Lyon, INSA de Lyon, École Centrale de Lyon, Université Claude Bernard Lyon 1
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications (CRHEA), UMR CNRS 7073, Université Côte d’Azur, Rue Bernard Grégory, Valbonne 06560, France
Funding
Agence Nationale de la Recherche · Fonds de recherche du Qu?bec
References (60)
Show source-provided references
1. 10.1063/5.024101110.1063/5.0241011 ↗
2. 10.1038/s41377-024-01639-310.1038/s41377-024-01639-3 ↗
3. 10.1016/j.fmre.2021.11.02810.1016/j.fmre.2021.11.028 ↗
4. 10.3390/electronics1422443010.3390/electronics14224430 ↗
5. 10.1088/1361-6641/adb32d10.1088/1361-6641/adb32d ↗
6. 10.20517/mre.2022.4710.20517/mre.2022.47 ↗
7. 10.1002/pssb.20030334110.1002/pssb.200303341 ↗
8. 10.4028/www.scientific.net/MSF.778-780.97110.4028/www.scientific.net/MSF.778-780.971 ↗
9. 10.1063/5.019082210.1063/5.0190822 ↗
10. 10.1109/ACCESS.2020.296702710.1109/ACCESS.2020.2967027 ↗
11. 10.4028/www.scientific.net/MSF.740-742.112310.4028/www.scientific.net/MSF.740-742.1123 ↗
12. 10.1049/pel2.1236610.1049/pel2.12366 ↗
13. 10.1109/LED.2017.267854010.1109/LED.2017.2678540 ↗
14. 10.1109/LED.2017.267092510.1109/LED.2017.2670925 ↗
15. 10.3390/electronics805057510.3390/electronics8050575 ↗
16. 10.1002/pssa.20130055810.1002/pssa.201300558 ↗
17. 10.1016/j.pedc.2024.10006510.1016/j.pedc.2024.100065 ↗
18. 10.1063/1.477351010.1063/1.4773510 ↗
19. 10.1103/PhysRevB.72.04542310.1103/PhysRevB.72.045423 ↗
20. 10.1088/1361-6463/ab36e810.1088/1361-6463/ab36e8 ↗
21. 10.1088/1361-6641/ac5e0110.1088/1361-6641/ac5e01 ↗
22. 10.1063/1.134830410.1063/1.1348304 ↗
23. 10.1103/PhysRevB.28.192810.1103/PhysRevB.28.1928 ↗
24. 10.1063/1.496450410.1063/1.4964504 ↗
25. 10.1063/1.314886210.1063/1.3148862 ↗
26. 10.1063/1.494307910.1063/1.4943079 ↗
27. 10.1002/pssb.222119021910.1002/pssb.2221190219 ↗
28. 10.3390/cryst908042810.3390/cryst9080428 ↗
29. 10.1103/PhysRevB.15.217710.1103/PhysRevB.15.2177 ↗
30. 10.1103/PhysRev.124.186610.1103/PhysRev.124.1866 ↗
31. 10.1063/1.474827910.1063/1.4748279 ↗
32. 10.1063/5.017808610.1063/5.0178086 ↗
33. 10.1016/j.jcrysgro.2006.10.22310.1016/j.jcrysgro.2006.10.223 ↗
34. 10.1016/S0038-1101(98)00087-210.1016/S0038-1101(98)00087-2 ↗
35. 10.1063/1.479400910.1063/1.4794009 ↗
36. Feng Z. C. · 202410.1201/9781032644912 ↗
37. 10.3390/nano1503016510.3390/nano15030165 ↗
38. 10.1002/1521-3951(200212)234:3<965::AID-PSSB965>3.0.CO;2-P10.1002/1521-3951(200212)234:3<965::AID-PSSB965>3.0.CO;2-P ↗
39. 10.1088/1674-4926/30/12/12300310.1088/1674-4926/30/12/123003 ↗
40. 10.1039/C9NR01128A10.1039/C9NR01128A ↗
41. 10.1016/j.ssc.2020.11389510.1016/j.ssc.2020.113895 ↗
42. 10.1088/0953-8984/14/38/20110.1088/0953-8984/14/38/201 ↗
43. 10.1016/j.jlumin.2022.11921410.1016/j.jlumin.2022.119214 ↗
44. 10.1063/1.36797210.1063/1.367972 ↗
45. 10.1109/TDMR.2016.261745810.1109/TDMR.2016.2617458 ↗
46. 10.1063/1.12408310.1063/1.124083 ↗
47. 10.1063/1.11580510.1063/1.115805 ↗
48. 10.1063/1.157122010.1063/1.1571220 ↗
49. 10.1063/1.347382610.1063/1.3473826 ↗
50. 10.1103/PhysRevB.56.952410.1103/PhysRevB.56.9524 ↗
51. 10.1063/1.308355410.1063/1.3083554 ↗
52. 10.1063/5.027458410.1063/5.0274584 ↗
53. Grundmann M. · 201610.1007/978-3-319-23880-7 ↗
54. Seeger K. · 200410.1007/978-3-662-09855-4 ↗
55. 10.1103/PhysRev.79.101310.1103/PhysRev.79.1013 ↗
56. Morkoç H. · 2008 · 2
57. Look D. C. · 1989
58. 10.1016/0038-1098(95)00337-110.1016/0038-1098(95)00337-1 ↗
59. 10.1063/1.136464610.1063/1.1364646 ↗
60. Sze S. M. · 200610.1002/0470068329 ↗