journal article·2025

Broadband photoresponse based on a Te/CuInP 2 S 6 ferroelectric field-effect transistor

YaJie Bai, Dongliang Shan, Huixian Li, Yuhao Ye, Suofu Wang, Tao Han, Wenhui Wang, Feng Li, Yunya Liu, Lei Shan, Mingsheng Long

Nanoscale· Volume 17· Issue 19
Publisher page

Abstract

Narrow bandgap two-dimensional (2D) semiconductors have garnered significant attention for their potential applications in next-generation optoelectronic devices. However, only few previous studies have manipulated electronic polarization, such as ferroelectric polarization and spin polarization, in conjunction with photodetectors. In this work, we designed Te ferroelectric field-effect transistors (Fe-FETs) that exhibit a clear counterclockwise hysteresis loop in transfer characteristic curves. The device achieves an ultrabroad band photoresponse from 637 nm to 10.6 μm and a high photoresponsivity (R) of 10.2 A W-1 under 1 V bias. Importantly, under 637 nm laser irradiation, the device shows a very fast speed with a rise time (τr) of 3.86 μs and decay time (τd) of 6.28 μs. The proposed Te Fe-FET device provides a strategy for designing high-performance photodetectors with extensive applications.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China

Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China

School of Physics, Southeast University, Nanjing 211189, China

Key Laboratory of Opto-Electronic Information Acquisition and Manipulation of Ministry of Education, Anhui University, Hefei, Anhui, 230601, China

Funding

National Natural Science Foundation of China · Chinese Academy of Sciences

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