Temperature and electron concentration dependences of 1/ f noise in Hg 1− x Cd x Te – evidence for a mobility fluctuations mechanism
Source abstract
Abstract
Hg1-xCdxTe is a unique material with its bandgap being tunable by temperature, pressure, and cadmium content over a wide range, from 1.6 eV to an inverted bandgap of -0.3 eV. This makes Hg1-xCdxTe one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material's noise properties. In this work, we investigated the low-frequency 1/f noise in a thick (800 nm) HgCdTe layer and in a field effect transistor (FET) with an 8 nm wide HgTe quantum well. Both structures exhibited a small contribution from contact noise and showed weak noise dependences on temperature. Investigation of the 1/f noise in the HgTe quantum well FET as a function of gate voltage revealed that the noise also depends weakly on electron concentration. These findings indicate that the noise properties of Hg1-xCdxTe are similar to those of graphene, where mobility fluctuations were found to be the dominant mechanism of the 1/f noise.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Machine Learning in Materials Science
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany
International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Warsaw 02-668, Poland
University of Rzeszów, Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, 35-959 Rzeszów, Poland
Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, Warsaw 02-822, Poland
Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Advanced Materials Center, 80-233 Gdańsk, Poland
Funding
Narodowe Centrum Nauki · Fundacja na rzecz Nauki Polskiej · European Research Council
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